| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Depolarization Field and Interfacial Coupling on the Polarization of Ferroelectric Bilayers |
| ZHENG Chao-Dan1,2,3, ZHANG Duan-Ming2, LIU Xin-Ming3, YANG Bin2,3, LIU Chao-Jun3, YU Jun3 |
| 1School of Information Engineering, Nanchang University, Nanchang 3300312School of Physics, Huazhong University of Science and Technology, Wuhan 4300743Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 |
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| Cite this article: |
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ZHENG Chao-Dan, ZHANG Duan-Ming, LIU Xin-Ming et al 2010 Chin. Phys. Lett. 27 017702 |
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Abstract A ferroelectric bilayer model considering depolarization field and interfacial coupling is proposed and the expression of the depolarization field is derived. The spatial profiles of spontaneous polarization and hysteresis loops are calculated using the numerical method with and without considering the depolarization field. The effects of the depolarization field and interfacial coupling on the polarization of second-order ferroelectric bilayers are studied systematically. When interfacial coupling is ferroelectric coupling, the interface spontaneous polarization increases and the area of hysteresis loop becomes larger with increasing coupling. When interfacial coupling is antiferroelectric coupling, the depolarization field makes the central loop become smaller and the shape of the hysteresis loop becomes steep. Meanwhile, as interfacial coupling increases, the outer loops stretch further out horizontally and the size of the central loop widens.
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| Keywords:
77.80.Dj
77.80.-e
68.60.-p
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Received: 19 February 2009
Published: 30 December 2009
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| PACS: |
77.80.Dj
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(Domain structure; hysteresis)
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77.80.-e
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(Ferroelectricity and antiferroelectricity)
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68.60.-p
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(Physical properties of thin films, nonelectronic)
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[1] Singh M P et al 2006 J. Appl. Phys. 99 024105
[2] Jiang W and Lo V C 2008 Physica A 387 6778
[3] Jiang W and Lo V C 2005 Chin. Phys. Lett. 22219
[4] Jiang W and Bao-Dong B 2006 phys. stat. sol. 12 2892
[5] Wu Y Y et al 2008 Chin. Phys. Lett. 25 4131
[6] Lee H N et al 2005 Nature 433 395
[7] Junquera J and Ghosez P 2003 Nature 422 506
[8] Wang J and Zhang T Y 2008 Phys. Rev. B 77014104
[9] Yang B et al 2007 J. Phys. D 40 5696
[10] Kretschmer R and Binder K 1979 Phys. Rev. B 20 1065
[11] Glinchuk M D et al 2003 J. Appl. Phys. 931150
[12] Chew K H et al 2000 Appl. Phys. Lett. 77 2755
[13] Wu Y Z, Yao D L and Li Z Y 2002 J. Appl. Phys. 91 1482
[14] Tan E K et al 2001 Solid State Commun. 117 59
[15] Cao H X and Li Z Y 2005 Phys. Lett. A 335 444 |
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