CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements |
G. Güler1, Ö. Güllü2, S. Karatas3, Ö. F. Bakkaloglu4 |
1Department of Physics, Faculty of Education University of Adiyaman, 02100 Adiyaman, Turkey2Department of Physics, Faculty of Sciences and Arts, University of Batman, 72060 Batman, Turkey3Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaras Sütcü .Imam, 46100 Kahramanmaras Turkey4Department of Engineering Physics, Faculty of Engineering Physics, University of Gaziantep, 27310 Gaziantep, Turkey |
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Cite this article: |
G. Güler, Ö, . Güllü et al 2009 Chin. Phys. Lett. 26 067301 |
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Abstract Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I-V) and capacitance-voltage (C-V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76eV obtained from the C-V measurements is higher than that of the value 0.70eV obtained from the I-V measurements. The series resistance RS and the ideality factor n are determined from the d\ln(I)/dV plot and are found to be 193.62Ω and 1.34, respectively. The barrier height and the RS value are calculated from the H(I)-I plot and are found to be 0.71eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×1011cm-2eV-1 in (EC-0.446)eV to 2.801×1010cm-2eV-1 in (EC-0.631,eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor.
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Keywords:
73.30.+y
73.40.-c
73.40.Ei
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Received: 14 July 2008
Published: 01 June 2009
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PACS: |
73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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73.40.-c
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(Electronic transport in interface structures)
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73.40.Ei
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(Rectification)
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[1] Tyagi M S 1991 Introduction to SemiconductorMaterials and Devices (New York: John Wiley) [2] Kwok K K 1995 Complete Guide to SemiconductorDevices (New York: McGraw-Hill) [3] Sze SM 1981 Physics of Semiconductor Devices (NewYork: Wiley) chap 3 p 135 [4]Rhoderick E H and Williams R H 1988 Metal-Semiconductor Barrier Diodes (Oxford: Clarendon) [5] Karatas S and Alt{\indal S 2005 Mat.Sci. Eng. B 122 133 [6] Karatas S 2005 Solid State Cuumun. 135 500 [7] Aydin M E, Yakuphanoglu F, Eom J H and Hwang D H 2007 Physica B 387 239 [8] Tung R T 2001 Mater. Sci. Eng. R 35 1 [9] Brillson L J 1982 Sur. Sci. Rep. 2 123 [10] Morita M et al 1990 J. Appl. Phys. 68 1272 [11] Hanselaer P et al 1984 Appl. Phys. 56 2309 [12] Hanselaer P et al 1986 Appl. Phys. A 39 129 [13] Cova P and Singh A 1990 Solid State Electron. 33 11 [14] Karatas S et al 2005 Solid State Electron. 49 1052 [15] Akk{\il{\ic K et al 2007 Synth. Metals 157 297 [16] Kiziroglou M E et al 2005 IEEE Trans. Magn. 41 2639 [17] Zaman H et al 1997 IEEE Trans. Magn. 33 3517 [18] G\"uler G et al 2009 J. Phys: Conference Series 153 012054 [19] G\"uler G et al 2008 Physica B 403 2211 [20] Cheung S K et al 1986 Appl. Phys. Lett. 49 85 [21] Werner J H 1988 Appl. Phys. A 47 291 [22] Werner J H and Rau U 1994 Springer Series inElectronics and Photonics ed Luyand J F and Russer P (Berlin:Springer) p 32 [23] Siad M et al 2004 Appl. Sur. Sci. 236 366 [24] Forment S et al 2001 Semicond. Sci. Technol. 16 975 [25] Card J C and Rhoderick E H 1971 J. Phys. D 41589 |
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