Chin. Phys. Lett.  2009, Vol. 26 Issue (3): 037104    DOI: 10.1088/0256-307X/26/3/037104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method
SU Xin-Yan, HAN Yan, WANG Jian, YAO Jin-Jie
National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051
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SU Xin-Yan, HAN Yan, WANG Jian et al  2009 Chin. Phys. Lett. 26 037104
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Abstract Channel hot-electron (HE) energy in short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.
Keywords: 71.10.Ay      71.10.Li      71.15.Nc     
Received: 11 November 2008      Published: 19 February 2009
PACS:  71.10.Ay (Fermi-liquid theory and other phenomenological models)  
  71.10.Li (Excited states and pairing interactions in model systems)  
  71.15.Nc (Total energy and cohesive energy calculations)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/3/037104       OR      https://cpl.iphy.ac.cn/Y2009/V26/I3/037104
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SU Xin-Yan
HAN Yan
WANG Jian
YAO Jin-Jie
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