| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions |
| ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao, YAO Cun-Feng, LI Bing-Sheng, SUN You-Mei, SONG Shu-Jian |
| Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 |
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| Cite this article: |
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ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao et al 2009 Chin. Phys. Lett. 26 036101 |
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Abstract The surface damage to gallium nitride films irradiated by Arq+ (6≤q≤16) ions at room temperature is studied by the atomic force microscopy. It is found
that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120keV≤Ek≤220keV). For q≤14, surface of the irradiated region is covered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state, and increase with the increase of dose and charge state. Especially at and near boundary, a sharp bump like ridges in irradiated areas is observed, and there appear characteristic grooves in un-irradiated areas. For q=16, surface of the irradiated region was etched and erased.
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| Keywords:
61.80.Jh
61.82.Fk
61.72.Ff
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Received: 11 September 2008
Published: 19 February 2009
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| PACS: |
61.80.Jh
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(Ion radiation effects)
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61.82.Fk
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(Semiconductors)
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61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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