| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs |
| QI Wei, YU Hui, JIANG Xiao-Qing, YANG Jian-Yi, HAO Yin-Lei, ZHOU Qiang, WANG Ming-Hua |
| Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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QI Wei, YU Hui, JIANG Xiao-Qing et al 2009 Chin. Phys. Lett. 26 034215 |
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Abstract A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80mA, the extinction ratio exceeds 25dB at 1.55μm. The polarization sensitivity of the crosstalk is within ± 0.5dB. The switching speed is below 10ns. The flat response spectrum throughout the 1542-1562nm wavelength range indicates that this device is insensitive to wavelength.
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| Keywords:
42.82.Et
85.60.Bt
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Received: 11 November 2008
Published: 19 February 2009
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| PACS: |
42.82.Et
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(Waveguides, couplers, and arrays)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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