| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Correlation between Displacement Damage Dose and Proton Irradiation Effects on GaInP/GaAs/Ge Space Solar Cells |
| LIU Yun-Hong1,2, WANG Rong1,2,3, CUI Xin-Yu4, WANG Yong-Xia 1,2 |
| 1Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, Beijing Normal University, Beijing 1008752College of Nuclear Science and Technology, Beijing Normal University, Beijing 1008753Beijing Radiation Center, Beijing 1008754Tianjin Institute of Power Sources, Tianjin 300381 |
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LIU Yun-Hong, WANG Rong, CUI Xin-Yu et al 2009 Chin. Phys. Lett. 26 026102 |
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Abstract The irradiation effects of 0.28-2.80MeV protons on GaInP/GaAs/Ge solar cells have been analysed, and then correlated with the displacement damage dose. The results of I-V and spectral response measurements, combined with the SRIM-derived vacancies produced rates, show that the degradation of the solar cells is largely determined by the displacement damage of the GaAs sub-cell. Thus the SRIM-derived NIEL values for protons in the GaAs sub-cell are used to calculate the displacement damage dose. It is shown that the irradiation effects of the solar cells caused by protons at different energies are correlated well with the aid of displacement damage dose.
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| Keywords:
61.82.Fk
84.60.Jt
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Received: 17 June 2008
Published: 20 January 2009
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