CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots |
WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan |
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
|
Cite this article: |
WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song et al 2009 Chin. Phys. Lett. 26 107801 |
|
|
Abstract We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340nm and 1000nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77K.
|
Keywords:
78.66.Fd
81.05.Ea
81.15.Hi
|
|
Received: 02 March 2009
Published: 27 September 2009
|
|
PACS: |
78.66.Fd
|
(III-V semiconductors)
|
|
81.05.Ea
|
(III-V semiconductors)
|
|
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
|
|
|
|
[1] Knill E, Laflamme R and Milburn G J 2001 Nature 409 46 [2] Daniel L and David P D 1998 Phys. Rev. A 57120 [3] Ulrich S M, Benyoucef M et al 2005 Phys. Rev. B 71 235328 [4] Peng J, Ye X L and Wang Z G 2005 Nanotechnology 16 2775 [5] Stevenson R M, Thompson R M, Shields A J, Farrer I,Kardynal B E, Ritchie D A and Pepper M 2002 Phys. Rev. B 66 081302 [6] Arno H, Yann D, Eli K, Ulrich and Elisa M 2000 Phys.Rev. Lett. 84 5648 [7] Ward M B, Unitt D C, Yuan Z Y, See P, Stevenson R M,Cooper K et al 2004 Physica E 21 390 [8] Finley J J, Ashmore A D, Lema\^re A, Mowbray D J,Itskevich I E, Maksym P A, Hopkinson M and Krauss T F 2001 Phys. Rev. B 63 073307 [9] Huang S S, Niu Z C, Ni H Q et al 2007 J. Cryst.Growth 301--302 751 [10] Moskalenko E S, Karlsson K F, Holtz P O, Monemar B,Schoenfeld W V, Garcia J M and Petroff P M 2002 Phys. Rev. B 66 195332 [11] Nakata Y, Mukai K, Sugawara M et al 2001 J. Cryst.Growth 208 93 [12] Bayer M and Forchel A 2002 Phys. Rev. B 65041308 [13] Regelman D V, Dekel E, Gershoni D, Ehrenfreund E,Williamson A J, Shumway J, Zunger A, Schoenfeld W V and Petroff P M2001 Phys. Rev. B 64 165301 [14] Besombes L and Kheng K 2001 Phys. Rev. B 63155307 [15] Akimov A, Hundt A, Flissikowski F and Henneberger F 2002 Appl. Phys. Lett. 81 4730 [16] Baier M H, Malko A, Pelucchi E, Oberli D Y and Kapon E2006 Phys. Rev. B 73 205321 [17] Xiong Y H, Niu Z C, Dou X M, Sun B Q, Huang S S, Ni H Q,Du Y and Xia J B 2009 Chin. Phys. Lett. 26 026802 [18] Dou X M, Sun B Q, Xiong Y H, Huang S S, Ni H Q and Niu ZC 2008 Chin. Phys. Lett. 25 3440 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|