| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots |
| WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song et al 2009 Chin. Phys. Lett. 26 107801 |
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Abstract We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340nm and 1000nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77K.
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| Keywords:
78.66.Fd
81.05.Ea
81.15.Hi
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Received: 02 March 2009
Published: 27 September 2009
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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81.05.Ea
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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