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In/Pd-Doped SnO2-Based CO Micro-Structure Sensor with High Sensitivity and Quick Response |
| LIU Li1,2, ZHANG Tong1, LI Shou-Chun2, WANG Lian-Yuan2, FAN Hui-Tao1, LI Wei2 |
| 1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122College of Physics, Jilin University, Changchun 130012 |
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| Cite this article: |
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LIU Li, ZHANG Tong, LI Shou-Chun et al 2009 Chin. Phys. Lett. 26 100702 |
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Abstract In/Pd-doped SnO2 is synthesized via a sol-gel method and coated on a silicon substrate with Pt electrodes to fabricate a micro-structure sensor. The sensor can be used to detect CO down to 1ppm (the sensitivity is about 3), and the response time and recovery time are about 5 and 15s, respectively. Excellent selectivity is also found based on our sensor. These results demonstrate a promising approach to fabricate high-performance CO sensors with high sensitivity and quick response.
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| Keywords:
07.07.Df
82.47.Rs
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Received: 03 December 2008
Published: 27 September 2009
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| PACS: |
07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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82.47.Rs
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(Electrochemical sensors)
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[1] Janata J, Josowicz M and Michael-Devaney D 1994 Anal.Chem. 66 207
[2] Zhang Y G, Gu Y, Zhang X J, Li A Z and Tian Z B 2008 Chin. Phys. Lett. 25 3246
[3] Sang X Z, Yu C X, Yan B B, Ma J X, Meng Z F,Mayteevarunyoo T and Lu N G 2008 Chin. Phys. Lett. 233202
[4] Wang X H, Wang X L, Feng C, Xiao H L, Yang C B, Wang J X,Wang B Z, Ran J X and Wang C M 2008 Chin. Phys. Lett. 25266
[5] Li K, Liu H, Zhang Q C, Xue C G and Wu X P 2007 Chin.Phys. Lett. 24 1502
[6] Huang J T, Huang X g and Zhao H W 2008 Chin. Phys.Lett. 25 1329
[7] Feng C, Wang X L, Yang C B, Xiao H L, Zhang M L, Jiang LJ, Tang J, Hu G X, Wang J X and Wang Z G 2008 Chin. Phys.Lett. 25 3205
[8] Qiu C J, Dou Y W, Zhao Q L, Qu W, Yuan J, Sun Y M and CaoM S 2008 Chin. Phys. Lett. 25 3590
[9] Alireza K 2009 Chin. Phys. Lett. 26 060701
[10] Li M, Wang M, Rong H and Li H P 2006 Chin. Phys.Lett. 23 1211
[11] Sui X H, Pei W H, Zhang R X, Lu L and Chen H D 2006 Chin. Phys. Lett. 23 1932
[12] Lin K Q, Wei L M, Zhang D G, Zheng R S, Wang P, Lu Y Hand Ming H 2007 Chin. Phys. Lett. 24 3081
[13] Xin Z G, Lu Y H, Wang P, Lin K Q, Yan J and Ming H 2008 Chin. Phys. Lett. 25 4473
[14] Wang S, Wang Z, Liu X and Zhang L 2008 SensorsActuators B 131 318
[15] Liu Y, Koep E and Liu M 2005 Chem. Mater. 173997
[16] Zhang T, Qi Q, Liu K X, Liu L, Zhang L and Xu B K 2006 Trans. Nonferrous Met. Soc. Chin. 16 780
[17] Wan Q, Li Q H, Chen Y J, Wang T H, He X L, Li J P and LinC L 2004 Appl. Phys. Lett. 84 3654
[18] Chen Y C, Chang Y H, Chen G J, Chai Y L and Ray D T 2003 Sensors Actuators B 96 82
[19] Yang H, Zhang X and Tang A 2006 Nanotechnology 17 2860
[20] Vaishampayan M V, Deshmukh R G and Mulla I S 2008 Sensors Actuators B 131 665
[21] Franke M E, Koplin T J and Simon U 2006 Small 2 36 |
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