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In/Pd-Doped SnO2-Based CO Micro-Structure Sensor with High Sensitivity and Quick Response |
LIU Li1,2, ZHANG Tong1, LI Shou-Chun2, WANG Lian-Yuan2, FAN Hui-Tao1, LI Wei2 |
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122College of Physics, Jilin University, Changchun 130012 |
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Cite this article: |
LIU Li, ZHANG Tong, LI Shou-Chun et al 2009 Chin. Phys. Lett. 26 100702 |
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Abstract In/Pd-doped SnO2 is synthesized via a sol-gel method and coated on a silicon substrate with Pt electrodes to fabricate a micro-structure sensor. The sensor can be used to detect CO down to 1ppm (the sensitivity is about 3), and the response time and recovery time are about 5 and 15s, respectively. Excellent selectivity is also found based on our sensor. These results demonstrate a promising approach to fabricate high-performance CO sensors with high sensitivity and quick response.
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Keywords:
07.07.Df
82.47.Rs
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Received: 03 December 2008
Published: 27 September 2009
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PACS: |
07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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82.47.Rs
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(Electrochemical sensors)
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