| Original Articles |
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Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices |
| XIONG Guang-Cheng, CHEN Yuan-Sha, CHEN Li-Ping, LIAN Gui-Jun |
| Department of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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XIONG Guang-Cheng, CHEN Yuan-Sha, CHEN Li-Ping et al 2008 Chin. Phys. Lett. 25 3378-3380 |
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Abstract Charge carrier injection is performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions, exhibiting the stability without electric fields and dramatic changes in both resistance and interface barriers, which are entirely different from behaviour of semiconductor devices. The disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-structure oxide devices should associate with motion of charge carriers across interfaces. The results suggest that injected carriers should be still staying in devices and result in changes of properties, which lead to a carrier self-trapping and releasing picture in a strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2-δ devices show that oxides as functional materials could be used in microelectronics with some novel properties, in which the interface is very important.
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| Keywords:
72.80.-r
73.50.-h
73.40.-c
71.20.-b
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Received: 20 May 2008
Published: 29 August 2008
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| PACS: |
72.80.-r
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(Conductivity of specific materials)
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73.50.-h
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(Electronic transport phenomena in thin films)
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73.40.-c
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(Electronic transport in interface structures)
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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