Chin. Phys. Lett.  2008, Vol. 25 Issue (8): 3063-3066    DOI:
Original Articles |
A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition
FAN Hai-Bo, YANG Shao-Yan, ZHANG Pan-Feng, WEI Hong-Yuan, LIU Xiang-Lin, JIAO Chun-Mei, ZHU Qin-Sheng, CHEN Yong-Hai, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Cite this article:   
FAN Hai-Bo, YANG Shao-Yan, ZHANG Pan-Feng et al  2008 Chin. Phys. Lett. 25 3063-3066
Download: PDF(3252KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope
images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2θ locations of ZnO (002) face in the XRD patterns and the E2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

Keywords: 81.05.Dz      81.15.Gh      81.15.Aa      82.80.Ch      82.80.Ej     
Received: 20 March 2008      Published: 25 July 2008
PACS:  81.05.Dz (II-VI semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.15.Aa (Theory and models of film growth)  
  82.80.Ch  
  82.80.Ej (X-ray, M?ssbauer, and other γ-ray spectroscopic analysis methods)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I8/03063
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
FAN Hai-Bo
YANG Shao-Yan
ZHANG Pan-Feng
WEI Hong-Yuan
LIU Xiang-Lin
JIAO Chun-Mei
ZHU Qin-Sheng
CHEN Yong-Hai
WANG Zhan-Guo
Related articles from Frontiers Journals
[1] DING Bin-Feng. Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction[J]. Chin. Phys. Lett., 2012, 29(3): 3063-3066
[2] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 3063-3066
[3] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 3063-3066
[4] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 3063-3066
[5] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 3063-3066
[6] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 3063-3066
[7] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 3063-3066
[8] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 3063-3066
[9] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 3063-3066
[10] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng** . Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT[J]. Chin. Phys. Lett., 2011, 28(4): 3063-3066
[11] HOU Qi-Feng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. Chin. Phys. Lett., 2011, 28(3): 3063-3066
[12] YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing** . Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 3063-3066
[13] ZHOU Zhi-Feng, QIN Fu-Wen, **, ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 3063-3066
[14] LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers[J]. Chin. Phys. Lett., 2011, 28(12): 3063-3066
[15] HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing**, WANG Yong-Sheng . Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering[J]. Chin. Phys. Lett., 2011, 28(12): 3063-3066
Viewed
Full text


Abstract