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Surface Diffuseness Anomaly in 16O+208Pb Quasi-elastic Scattering at Backward Angle
JIA Hui-Ming, LIN Cheng-Jian, ZHANG Huan-Qiao, LIU Zu-Hua, YANG Feng, JIAFei, ZHANG Chun-Lei, AN Guang-Peng, WU Zhen-Dong, XU Xin-Xing, BAI Chun-Lin, YU Ning
Chin. Phys. Lett. 2008, 25 (8):
2834-2836
.
The quasi-elastic scattering excitation function of the doubly magic 16O+208Pb system at a backward angle is measured at sub-barrier energies with high precision. The diffuseness parameters extracted from both the single-channel and the coupled-channels calculations give almost the same value a = 0.76±0.04fm. The results show that the coupling effect is negligible for the spherical system. The obtained value is smaller than the extracted value from the fusion excitation function, but larger than the value of a = 0.63fm, which is from the systematic analysis of elastic scattering data.
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Theoretical Investigation on Excitation, Ionization and Capture in H(1s,2s) +H(1s, 2s) Collisions
CHEN Lan-Fang, ZHU Xiao-Long, MA Xin-Wen, LIU Ling, HE Bin, WANG Jian-Guo, Ratko JANEV
Chin. Phys. Lett. 2008, 25 (8):
2849-2852
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Cross sections of electron-loss in H(1s)+ H(1s) collisions and total collisional destruction of H(2s) in H(1s) + H(2s) collisions are calculated by four-body classical-trajectory Monte Carlo (CTMC) method and compared with previous theoretical and experimental data over the energy range of 4--100keV. For the former a good agreement is obtained within different four-body CTMC calculations, and for the incident energy Ep>10keV, comparison with the experimental data shows a better agreement than the results calculated by the impact parameter approximation. For the latter, our theory predicts the correct experimental behaviour, and the discrepancies between our results and experimental ones are less than 30%. Based on the successive comparison with experiments, the cross sections for excitation to H(2p), single- and double-ionization and H- formation in H(2s)+H(2s) collisions are calculate in the energy range of 4--100keV for the first time, and compared with those in H(1s)+H(1s) and H(1s)+H(2s) collisions.
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Photopolymerization-Induced Two-Beam Coupling and Light-Induced Scattering in Polymethyl Methacrylate
LI Wei, ZHANG Xin-Zheng, SHI Yan-Li, XU Jing-Jun, QIAO Hai-Jun, WU Qiang, Romano A. Rupp, LOU Ci-Bo, WANG Zhen-Hua, GAO Feng, TANG Bai-Quan, Christian Pruner
Chin. Phys. Lett. 2008, 25 (8):
2857-2859
.
Light amplification due to two-beam coupling is realized in doped polymethyl methacrylate (PMMA) glasses. A coupling gain as large as 14cm-1 is obtained. The dynamic behaviour of absorption and light-induced scattering due to the process of photopolymerization are also studied. The results show that the amplification and its dynamic process enable possible applications of PMMA in optical devices.
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Observation of Sub-femtosecond Polarization Beats Using Twin Noisy Driving Fields
LI Chuang-She, SHEN Lei-Jian, DU Yi-Gang, ZHENG Huai-Bin, NIE Zhi-Qiang, YANG Yong-Ming, ZHANG Wei-Feng, GAN Chen-Li, ZHANG Yan-Peng,
Chin. Phys. Lett. 2008, 25 (8):
2892-2895
.
We study the phase-conjugate polarization interference in a V-type three-level system and obtain an analytic closed form for the second-order stochastic correlation of sum-frequency polarization beat. In our Na vapour atomic system pumped by laser pulse of nano-second timescale duration, we experimentally demonstrate an ultrafast modulation of the four-wave mixing signal intensity with a sub-femtosecond timescale period, corresponding to the sum-frequency of the resonant transitions from 3S1/2 to 3P1/2 and 3P3/2.
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Scattering Noise Properties of Holographic Photopolymers by Means of Real-Time Transmittance Analysis
TAO Shi-Quan, WANG Huan-Yong, WAN Xiao-Jun, ZHAO Yu-Xia, ZHAI Qian-Li, LIU Peng-Fei, WU Fei-Peng
Chin. Phys. Lett. 2008, 25 (8):
2896-2899
.
We propose a simplified model to analyse the temporary behaviour of transmittance for holographic photopolymers, based on the existing first-harmonic diffusion theory, with assumptions of constant polymerization coefficient and negligible diffusion effect for noise gratings. By applying this model to measure real-time transmittance of our novel blue-sensitized photopolymer, the bleaching time constant of dye and polymerization rate are extracted, and the effect of the material composite on the noise property is revealed. This provides a prompt method to assess the performances of holographic photopolymers.
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High-Efficiency Bistable Switching Based on One-Dimensional Photonic Crystals with Single-Negative Materials
DU Gui-Qiang, JIANG Hai-tao, LI Hong-Qiang, ZHANG Ye-Wen, CHEN Hong
Chin. Phys. Lett. 2008, 25 (8):
2900-2903
.
We study theoretically the nonlinear responses of one-dimensional photonic crystals (PCs) composed of alternating two kinds of single-negative (permittivity-negative and permeability-negative) materials embedded with a Kerr-type nonlinear defect layer. In conventional PCs, it is difficult to realize a bistable switching with both low threshold and quick response time. However, in PCs with single-negative materials, by changing the ratio of the thicknesses of the two types of layers, with the decreasing size of the structure, the switching response time is shortened and the threshold intensity decreases simultaneously.
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Multimode-Waveguide-Based Optical Power Splitters in Glass
GAO Yang, GONG Zhao, BAI Ren, HAO Yin-Lei, LI Xi-Hua, JIANG Xiao-Qing, WANG Ming-Hua, PAN Jian-Xia, YANG Jian-Yi
Chin. Phys. Lett. 2008, 25 (8):
2912-2914
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Low-loss glass-based buried multimode waveguides are fabricated by using the field-assisted Ag+--Na+ ion-exchange technique, and multimode optical power splitters are investigated. The measured loss of the multimode waveguides is lower than 0.1dB/cm, and the additional loss of the multimode optical power splitters is lower than 1.3dB under the uniform splitting condition.
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A Feasible Approach to Optical--Electrical Hybrid Data Storage Using Phase Change Material
SUN Hua-Jun, HOU Li-Song, WU Yi-Qun, ZHAI Feng-Xiao
Chin. Phys. Lett. 2008, 25 (8):
2915-2917
.
We present our experimental results supporting optical--electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser-irradiated Ge2Sb2Te5 films exhibits an abrupt change of four orders of magnitude (from 107 to 103Ω/sq) with increasing laser power, current-voltage curves of the amorphous area and the laser-crystallized dots, measured by a conductive atomic force microscope (C-AFM), show that their resistivities are 2.725 and 3.375×10-3Ω, respectively, the surface current distribution in the films also shows high and low resistance states. All these results suggest that the laser-recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical--electrical hybrid data storage possible.
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Effect of Sound Source Scattering on Measurement of Near-Field Head-Related Transfer Functions
YU Guang-Zheng, XIE Bo-Sun, RAO Dan,
Chin. Phys. Lett. 2008, 25 (8):
2926-2929
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A simple spherical head and pulsating spherical sound source model are proposed to investigate the effect of multiple scattering between the head and the sound source on near-field head-related transfer function (HRTF) measurement. Multipole expansion method is used to calculate HRTFs of the model, then the relationships among the magnitude error of HRTF with frequency, source direction, source size, and the distance between the head centre and the sound source are analysed. The results show that to ensure the magnitude error of HRTF within 1.0dB up to 20kHz, for source distance not less than 0.15m or 0.20m, the radius of the sound source should not exceed 0.03m or 0.05m, respectively. The conclusion suggests an appropriate size of sound source in near-field HRTF measurement.
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Self-Injection and Acceleration of Monoenergetic Electron Beams from Laser Wakefield Accelerators in a Highly Relativistic Regime
H. Yoshitama, T. Kameshima, GU Yu-Qiu, GUO Yi, JIAO Chun-Ye, LIU Hong-Jie, PENG Han-Sheng, TANG Chuan-Ming, WANG Xiao-Dong, WEN Xian-Lun, WEN Tian-Shu, WU Yu-Chi, ZHANG Bao-Han, ZHU Qi-Hua, HUANG Xiao-Jun, AN Wei-Min, HUNG Wen-Hui, TANG Chuan-Xiang, LIN Yu-Zheng, WANG Xiao-Dong, CHEN Li-Ming, H.~Kotaki, M.~Kando, K.~Nakajima,
Chin. Phys. Lett. 2008, 25 (8):
2938-2941
.
Self-injection and acceleration of monoenergetic electron beams from laser wakefield accelerators are first investigated in the highly relativistic regime, using 100TW class, 27fs laser pulses. Quasi-monoenergetic multi-bunched beams with energies as high as multi-hundredMeV are observed with simultaneous measurements of side-scattering emissions that indicate the formation of self-channelling and self-injection of electrons into a plasma wake, referred to as a `bubble'. The three-dimensional particle-in-cell simulations confirmed multiple self-injection of electron bunches into the bubble and their beam acceleration with gradient of 1.5GeV/cm.
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CHF3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy
XU Yi-Jun, YE Chao, HUANG Xiao-Jiang, YUAN Jing, XING Zhen-Yu, NINGZhao-Yuan
Chin. Phys. Lett. 2008, 25 (8):
2942-2945
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We investigate the intermediate gas phase in the CHF3 13.56MHz/2MHz dual-frequency capacitively couple plasma (CCP) for the SiCOH low dielectric constant (low-k) film etching, and the effect of 2MHz power on radicals concentration. The major dissociation reactions of CHF3 in 13.56MHz CCP are the low dissociation bond energy reactions, which lead to the low F and high CF2 concentrations. The addition of 2MHz power can raise the probability of high dissociation bond energy reactions and lead to the increase of F concentration while keeping the CF2 concentration almost a constant, which is of advantage to the SiCOH low-k films etching. The radical spatial uniformity is dependent on the power coupling of two sources. The increase of 2MHz power leads to a poor uniformity, however, the uniformity can be improved by increasing 13.56MHz power.
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First-Principles Calculations of Elastic Properties of LaNi5 Compound
CHEN Dong, XU Guo-Liang, ZHANG Xin-Wei, ZHAO Ying-Lu, YU Ben-Hai, SHI De-Heng
Chin. Phys. Lett. 2008, 25 (8):
2950-2953
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The equilibrium lattice constants, temperature dependence of bulk modulus, the pressure dependence of the normalized volume V/V0, elastic constants Cij and bulk modulus of LaNi5 crystal are obtained using the first-principles plane-wave pseudopotential method in the GGA-PBE generalized gradient approximation as well as the quasi-harmonic Debye model. We analyse the relationship between bulk modulus and temperature up to 1000K and obtain the relationship between bulk modulus B and pressure at different temperatures. It is found that the bulk modulus B increases monotonously with increasing pressure. Moreover, the pressure dependences of Debye temperatures and the pressure derivatives of lattice constants are also successfully obtained. The calculated results are in agreement with the experimental data and the other theoretical results
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Melting Behaviour of Mo by Shock Wave Experiment
ZHANG Xiu-Lu, CAI Ling-Cang, CHEN Jun, XU Ji-An, JING Fu-Qian,
Chin. Phys. Lett. 2008, 25 (8):
2969-2972
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In order to clarify the apparent discrepancy in determinations of melting temperature Tm of Mo between diamond-anvil cell (DAC) measurements from 0 to about 100GPa and shock wave (SW) measurement at only one pressure of about 390GPa by comparison with visual extrapolation, we perform SW experiments to replenish more Tm data on purpose to make this comparison more directly and rationally as well. The techniques adopted consist of Hügoniot sound velocity measurement for porous Mo and shock-induced release Tm measurements for both solid and porous Mo. Totally five SW Tm data, which extends the measured pressure range from previous about 390GPa down to about 136GPa that is close to the highest pressure (about 100GPa) attained by previous DAC experiments, are therefore obtained. These measured Tm data, other than the extrapolated as mentioned above, exhibit a manner of continuous variation with pressure and can be fitted well with Lindemann melting description. More significantly, the measured Tm data at lowest pressure are still much higher than that of the DACs and the overall trend of these Tm data is against to the two-segment melting curve model, with a sudden change in dTm/dP at about 210GPa, previously proposed by Errandonea [Physica B 357 (2005) 356]. Though the problem of large discrepancy in Tm data measured between DAC and SW has not been completely explained, our knowledge on this matter achieves indubitable progress since it is of value to programme the next clarification. Some suggestions for further clarifying the issue of large discrepancy between DAC and SW measurements are also proposed.
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Bi- and Au-Induced Reconstructions on GaAs(001)-2×4 Surface
TANG Zhe, YANG Shen-Yuan, JIANG Ying, WANG Wen-Xin, JIA Jin-Feng, XUEQi-Kun, WANG En-Ge, WU Ke-Hui
Chin. Phys. Lett. 2008, 25 (8):
2977-2980
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Submonolayer Bi and Au adsorptions on the GaAs(001)-2×4 surface are investigated by scanning tunnelling microscopy, low energy electron diffraction and first-principles calculations. The 1×4 and 3×4 reconstructed surface induced by Bi and Au, respectively, are revealed and their structural models are proposed based on experiments and first-principles calculations. Moreover, the validity of the recently proposed generalized electron counting (GEC) model [Phys. Rev. Lett. 97 (2006) 126103] is examined in detail by using the two surfaces. The GEC model perfectly explains the structural features, such as the characteristic short double-line structure in the Bi-1×4 surface and the 3× arrangement of four-atom Au clusters.
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Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment
WANG Xiang-Hu, YAO Bin, WEI Zhi-Peng, SHEN De-Zhen, ZHANG Zhen-Zhong, LU You-Ming, ZHANG Ji-Ying, FAN Xi-Wu
Chin. Phys. Lett. 2008, 25 (8):
2993-2996
.
The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N2 are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O2. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N2)O to the N atom number on O site (NO) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N2, the percentage content of (N2)O is larger than that of NO, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O2, the percentage content of (N2)O is fewer than that of NO, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N2 and that of ZnO:N film annealed in O2. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N2, this emission band is due to donor-bound exciton (D0X). After annealed in O2, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A0X).
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First-Principles Study of Defects in CuGaO2
FANG Zhi-Jie, FANG Cheng, SHI Li-Jie, LIU Yong-Hui, HE Man-Chao
Chin. Phys. Lett. 2008, 25 (8):
2997-3000
.
Using the first-principles methods, we study the electronic structure, intrinsic and extrinsic defects doping in transparent conducting oxides CuGaO2. Intrinsic defects, acceptor-type and donor-type extrinsic defects in their relevant charge state are considered. The calculation result show that copper vacancy and oxygen interstitial are the relevant defects in CuGaO2. In addition, copper vacancy is the most efficient acceptor. Substituting Be for Ga is the prominent acceptor, and substituting Ca for Cu is the prominent donors in CuGaO2. Our calculation results are expected to be a guide for preparing n-type and p-type materials in CuGaO2.
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Effect of CO on Characteristics of AlGaN/GaN Schottky Diode
FENG Chun, WANG Xiao-Liang, YANG Cui-Bai, XIAO Hong-Ling, ZHANG Ming-Lan, JIANG Li-Juan, TANG Jian, HU Guo-Xin, WANG Jun-Xi, WANG Zhan-Guo
Chin. Phys. Lett. 2008, 25 (8):
3025-3027
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Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor signal (3mA, in N2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50°C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection.
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Fano--Kondo Effect in a Triple Quantum Dots Coupled to Ferromagnetic Leads
BI Ai-Hua, WU Shao-Quan, HOU Tao, SUN Wei-Li
Chin. Phys. Lett. 2008, 25 (8):
3028-3031
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Using the Keldysh nonequilibrium Green function and equation-of-motion technique, we have qualitatively studied the spin-dependent transport of a triple-QD system in the Kondo regime. It is shown that the Kondo resonance and Fano interference coexist, and in this system the Fano--Kondo effect shows dip behaviours richer than that in the T-shaped QDs. The interdot coupling, the energy level of the side coupled QDs and the spin polarization strength greatly influence the DOS of the central quantum dot QD0. Either the increase of the coupling strength between the two QDs or that of the energy levels of the side coupled QDs enhances the Kondo resonance. Especially, the Kondo resonance is strengthened greatly when the side dot energy is fixed at the Fermi energy. Meanwhile, the Kondo resonance splits for the spin-up and spin-down configurations due to the polarization: the down-spin resonance is enhanced, and the up-spin resonance is suppressed.
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Dielectric and Pyroelectric Properties of (Pb0.50Sr0.50)TiO3 Ceramics
JIANG Yan-Ping, TANG Xin-Gui, LIU Qiu-Xiang, ZHOU Yi-Chun, CHAN-WONG Lai-Wa
Chin. Phys. Lett. 2008, 25 (8):
3044-3047
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Lead strontium titanate (Pb0.50Sr0.50)TiO3 (PST) ceramics are prepared by the traditional ceramic processing. The dielectric constants and dielectric loss have been investigated in a temperature range from 25°C to 300°C. The maximum dielectric constants for unpoled and poled samples are 9924 and 9683, respectively. The temperatures of phase transition for unpoled and poled samples are observed at 153°C and 157°C, respectively. The phase-transition temperatures for unpoled and poled samples are not equal, which results from the polarization state of the domains. The remnant polarization and the coercive electric field are 18μC/cm2 and 6kV/cm, respectively, from polarization-electric field (P-E) hysteresis loop. The temperature dependence of pyroelectric coefficients of the PST ceramics is measured by a dynamic technique. The dielectric constant and loss tan δ of the poled PST ceramics are 813 and 0.010, respectively. The pyroelectric coefficients and figure of merit are 294μC/cm2K and 13.6×10-6Pa-0.5, respectively, at room temperature 25°C and frequency 100Hz.
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A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistor
YANG Yuan, GAO Yong, GONG Peng-Liang
Chin. Phys. Lett. 2008, 25 (8):
3048-3051
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A novel fully depleted air AlN silicon-on-insulator (SOI) metal--oxide--semiconductor field effect transistor (MOSFET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.
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A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition
FAN Hai-Bo, YANG Shao-Yan, ZHANG Pan-Feng, WEI Hong-Yuan, LIU Xiang-Lin, JIAO Chun-Mei, ZHU Qin-Sheng, CHEN Yong-Hai, WANG Zhan-Guo
Chin. Phys. Lett. 2008, 25 (8):
3063-3066
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Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2θ locations of ZnO (002) face in the XRD patterns and the E2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.
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Bianchi Type-V Bulk Viscous Barotropic Fluid Cosmological Model with Variable G and Λ
Raj Bali, Seema Tinker
Chin. Phys. Lett. 2008, 25 (8):
3090-3093
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We investigate the Bianchi type-V bulk viscous barotropic fluid cosmological model with variable gravitational constant G and the cosmological constant Λ, assuming the condition on metric potential as A'/A=B'/B=C'/C=m/tn, where A, B, and C are functions of time t, while m and n are constants. To obtain the deterministic model, we also assume the relations P = p - 3ηH, p =γρ, η=η0ρs, where p is the isotropic pressure, η the bulk viscosity, 0≤γ≤1, H the Hubble constant, η0 and s are constants. Various physical aspects of the model are discussed. The case of n = 1 is also discussed to compare the results with the actual universe.
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97 articles
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