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Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements |
A. John Peter1, Vemuri Lakshminarayana2 |
| 1Govt. Arts College, Melur-625 106, Madurai, India2Mohamed Sathak Engineering College, Kilakarai-623 806, Ramnad, India |
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| Cite this article: |
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A. John Peter, Vemuri Lakshminarayana 2008 Chin. Phys. Lett. 25 3021-3024 |
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Abstract Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangular confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.
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| Keywords:
73.21.La
73.20.Dx
73.20.Mf
73.20.Hb
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Received: 17 December 2007
Published: 25 July 2008
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| PACS: |
73.21.La
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(Quantum dots)
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73.20.Dx
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73.20.Mf
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(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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