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A Feasible Approach to Optical--Electrical Hybrid Data Storage Using Phase Change Material |
| SUN Hua-Jun, HOU Li-Song, WU Yi-Qun, ZHAI Feng-Xiao |
| Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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SUN Hua-Jun, HOU Li-Song, WU Yi-Qun et al 2008 Chin. Phys. Lett. 25 2915-2917 |
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Abstract We present our experimental results supporting optical--electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser-irradiated Ge2Sb2Te5 films exhibits an abrupt change of four orders of magnitude (from 107 to 103Ω/sq) with increasing laser power, current-voltage curves of the amorphous area and the laser-crystallized dots, measured by a conductive atomic force microscope (C-AFM), show that their resistivities are 2.725 and 3.375×10-3Ω, respectively, the surface current distribution in the films also shows high and low resistance states. All these results suggest that the laser-recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical--electrical hybrid data storage possible.
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42.79.Vb
84.37.+q
61.43.Dq
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Received: 12 April 2008
Published: 25 July 2008
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| PACS: |
42.79.Vb
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(Optical storage systems, optical disks)
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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