Enhancement in Thermoelectrical Power Factor of N-Type Si<SUB>80</SUB>Ge<SUB>20</SUB> Alloys

Chin. Phys. Lett.

2008, Vol. 25

Issue (7): 2664-2666 DOI:

Original Articles

Enhancement in Thermoelectrical Power Factor of N-Type Si₈₀Ge₂₀ Alloys

XU Ya-Dong, XU Gui-Ying, LIU Yan-Hong, GE Chang-Chun

Laboratory of Special Ceramics and Powder Metallurgy, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083

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XU Ya-Dong, XU Gui-Ying, LIU Yan-Hong et al 2008 Chin. Phys. Lett. 25 2664-2666

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Abstract Influences of the carrier concentration and mobility of heavily doped n-type Si₈₀Ge₂₀ alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 32--36μWcm^-1K^-2could be consistently achieved with carrier concentrations of 2.1--2.9×10²⁰cm^-3 and carrier mobilities of 36--40cm²V^-1s^-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.

Keywords: 81.05.Cy 81.05.Dz 81.05.Ea

Received: 12 January 2008 Published: 26 June 2008

PACS:	81.05.Cy	(Elemental semiconductors)
	81.05.Dz	(II-VI semiconductors)
	81.05.Ea	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2008/V25/I7/02664

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