| Original Articles |
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HPHT Synthesis of Micron Grade Boron-Doped Diamond Single Crystal in Fe-Ni-C-B Systems |
| ZHANG He-Min1, ZANG Chuan-Yi1, LI Xiao-Lei1, MA Hong-An2, LI Shang-Sheng2, ZHOU Sheng-Guo1, GUO Wei2, JIA Xiao-Peng 1,2 |
| 1Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 4540002National Lab of Super Hard Materials, Jilin University, Changchun 130012 |
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| Cite this article: |
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ZHANG He-Min, ZANG Chuan-Yi, LI Xiao-Lei et al 2008 Chin. Phys. Lett. 25 2667-2669 |
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Abstract Micron grade boron-doped diamond crystals with octahedral morphology are successfully synthesized in a Fe--Ni--C--B system under high pressure and high temperature (HPHT). The effects of the additive boron on synthesis conditions, nucleation and growth, crystal morphology of diamond are studied. The synthesized micron grade diamond crystals were characterized by optical microscope (OM), scanning electron microscope (SEM), x-ray diffraction (XRD) and Raman spectroscopy. The research results show that the V-shaped section of synthetic diamond moves downwards to the utmost extent due to 0.3a wt% (a is a constant.) boron added in the synthesis system. The crystal colour is black, and the average crystal size is about 25μm. The crystal faces of synthetic diamond are mainly 111 face. The synthesis of this kind of diamond is few reported, and it will have important and widely applications.
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| Keywords:
81.10.Aj
61.72.S-
81.10.-h
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Received: 19 January 2008
Published: 26 June 2008
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| PACS: |
81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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61.72.S-
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(Impurities in crystals)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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