Magnetoresistance Probe of Ultrathin Mn<SUB>5</SUB>Ge<SUB>3 </SUB>Films with Anderson Weak Localization

Chin. Phys. Lett.

2008, Vol. 25

Issue (7): 2625-2627 DOI:

Original Articles

Magnetoresistance Probe of Ultrathin Mn₅Ge₃Films with Anderson Weak Localization

CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng, HE Wei, LI Qing-An

State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190

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CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng et al 2008 Chin. Phys. Lett. 25 2625-2627

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Abstract We present the magnetoresistance measurements of ultrathin Mn₅Ge₃}$ films with different thicknesses at low Temperatures. Owing to the lattice mismatch between Mn₅Ge₃ and Ge (111), the thickness of Mn₅Ge₃films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn₅Ge₃ films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn₅Ge₃ film is a potential material for spin injection.

Keywords: 73.20.Fz 73.43.Qt

Received: 18 March 2008 Published: 26 June 2008

PACS:	73.20.Fz	(Weak or Anderson localization)
	73.43.Qt	(Magnetoresistance)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2008/V25/I7/02625

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	CHEN Li-Jun
	WANG De-Yong
	ZHAN Qing-Feng
	HE Wei
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