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High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites |
HOU Zhi-Ling1,2;ZHANG Liang1;YUAN Jie1,3;SONG Wei-Li1;CAO Mao-Sheng1 |
1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 1000812School of Science, Beijing University of Chemical Technology, Beijing 1000293School of Mathematics and Computer Science, Central University of Nationalities, Beijing 100081 |
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Cite this article: |
HOU Zhi-Ling, ZHANG Liang, YUAN Jie et al 2008 Chin. Phys. Lett. 25 2249-2252 |
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Abstract The high-temperature dielectric properties of SiO2/Si3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.
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Keywords:
77.84.Lf
81.07.Wx
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Received: 01 February 2008
Published: 31 May 2008
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