| Articles |
|
|
|
|
Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition |
| XIE Zi-Li1;ZHANG Rong1;XIA Chang-Tai2;XIU Xiang-Qian1;HAN Ping1;LIU Bin1;ZHAO Hong1;JIANG Ruo-Lian1;SHI Yi1;ZHENG You-Dou1 |
| 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 2100932Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
|
| Cite this article: |
|
XIE Zi-Li, ZHANG Rong, XIA Chang-Tai et al 2008 Chin. Phys. Lett. 25 2185-2186 |
|
|
|
Abstract The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes (LEDs) on (100) β-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) θ-2θ scan spectroscopy is carried out on the GaN buffer layer grown on a (100) β-Ga2O3 substrate. The spectrum presents several sharp
peaks corresponding to the (100) β-Ga2O3 and (004) GaN. High-quality (0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on β-Ga2O3 with vertical current injection is demonstrated.
|
| Keywords:
71.20.Nr
71.55.Eq
73.21.Fg
|
|
|
Received: 14 November 2007
Published: 31 May 2008
|
|
|
|
|
|
|
|
[1]Reed M D et al 2005 J. Crystal Growth 274 14
[2]Gardner N F et al 2005 Appl. Phys. Lett. 86111101
[3] Shimamura K et al 2005 Jpn. J. Appl. Phys. 44L7
[4] Zhang J G et al 2006 J. Functional Mater. 37358 (In China)
[5] Chichibu S et al 1998 J. Vac. Sci. Technol. B 16 2204 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
