| Original Articles |
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Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of V / III Ratio |
| ZHANG Jie, GUO Li-Wei, XING Zhi-Gang, GE Bing-Hui, DING Guo-Jian, PENG Ming-Zeng, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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ZHANG Jie, GUO Li-Wei, XING Zhi-Gang et al 2008 Chin. Phys. Lett. 25 4449-4452 |
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Abstract High quality and highly conductive n-type Al0.7Ga0.3N films are obtained by using AlN multi-step layers (MSL) with periodical variation of V/III ratios by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). The full-width at half-maximum (FWHM) of (0002) and (10-15) rocking curves of the Si-doped Al0.7Ga0.3N layer are 519 and 625 arcsec, respectively. Room temperature (RT) Hall measurement shows a free electron concentration of 2.9×1019cm-3, and mobility of 17.8cm2V-1s-1, corresponding to a resistivity of 0.0121Ωcm. High conductivity of the Si-doped AlGaN film with such high Al mole fraction is mainly contributed by a remarkable reduction of threading dislocations (TDs) in AlGaN layer. The TD reducing mechanism in AlN MSL growth with periodical variation of V / III ratio is discussed in detail.
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| Keywords:
81.05.Ea
81.15.Gh
61.05.Cp
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Received: 03 June 2008
Published: 27 November 2008
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.05.cp
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(X-ray diffraction)
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