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High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm |
LV Shi-Long1,2, SONG Zhi-Tang1, ZHANG Ting1, FENG Song-Lin1 |
1Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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Cite this article: |
LV Shi-Long, SONG Zhi-Tang, ZHANG Ting et al 2008 Chin. Phys. Lett. 25 4174-4176 |
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Abstract Si16Sb84-based line cell phase change random access memory (PCRAM), in which the Si16Sb84 phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography. The lowest current and measured pulse width for RESET operation are 115μA and 18ns, respectively. The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 106 cycles with a resistance ratio of above 800 has been achieved.
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Keywords:
84.37.+q
85.30.De
85.40.Hp
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Received: 31 August 2008
Published: 25 October 2008
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PACS: |
84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.40.Hp
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(Lithography, masks and pattern transfer)
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[1] Lai S and Lowrey T 2001 IEEE Int. Electron Devices Meeting (Washington, DC, 2--5 December 2001) p 803 [2] Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F, Hudgens S and Bez R 2003 Tech. Dig. Int. Electron Devices Meeting (Washington, DC, 8--10 December 2003) p 699 [3] Lai S 2003 IEEE Int. Electron Devices Meeting (Washington, DC, 8--10 December 2003) p 255 [4] Pellizzer F, Benvenuti A, Gleixner B, Kim Y, Johnson B, Magistretti M, Marangon T, Pirovano A, Bez R and Atwood G 2006 Symp. VLSI p122 [5] Cho S L,~Yi J H, Ha Y H, Kuh B J, Lee C M, Park J H, Nam S D,~Horii H,~Cho B K, Ryoo K C, Park S O, Kim H S, Chung U I,~Moon J T and Ryu B I 2005 Symp. VLSI Tech. p 96 [6] Lankhorst M H R, Ketelaars W S M M and Wolters R A M 2005 Nature Mater. 4 347 [7] Chen Y C et al 2006 IEDM Tech. Dig. (San Francisco, CA, 10--13 December 2006) p 777 [8] Jedema F J, van der Wagt J, in t Zandt M A A, Wolters R A M, Ketelaars B W S M M, Delhougne R, Tio Castro D, Gravesteijn D J and Attenborough K 2007 Proceedings of the ICMTD (unpublished) p51 [9] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J. Appl. Phys. 94 3536 [10] Nakayama K, Kojima K, Imai Y, Kasai T, Fukushima S, Kitagawa A, Kumeda M, Kakimoto Y and Suzuki M 2003 Jpn. J. Appl. Phys. 42 404 [11] Liu B, Zhang T, Xia J L, Song Z T, Feng S L and Chen B 2004 Semicond. Sci. Technol. 19 L61 [12] Yoon S M, Lee N Y, Ryu S O, Choi K J, Park Y S, Lee S Y, Yu B G, Kang M J, Choi S Y and Wuttig M 2006 IEEE Electron Device Lett. 27 445 [13] Zhang T, Song Z T, Wang F, Liu B, and Feng S L 2007 Appl. Phys. Lett. 91 222102 [14] Aktary M, Jensen M O, Westra K L, Brett M J, Freeman M R 2003 J. Vac. Sci. Technol. B 21 L5 [15] P\'epin A, Studer V, Decanini D and Chen Y 2004 Microelectron. Engin. 73 233 [16] Bilenberg B, Sch{\oler M, Shi P, Schmidt M S, B{\ogild P, Fink M, Schuster C, Reuther F, Gruetzner C and Kristensen A 2006 J. Vac. Sci. Technol. B 24 1776 [17] Lee S H, Hwang Y N, Lee S Y, Ryoo K C, Ahn S J, Koo H C, Jeong C W, Kim Y T, Koh G H, Jeong G T, Jeong H S and Kim K 2004 Proc. Symp. VLSI Tech. Dig. p 20 [18] Hwang Y N, Hong J S, Lee S H et al 2003 Proc. Symp. VLSI Tech. Dig. p 173 |
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