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Fabrication and Characterization of Mg-Doped GaN Nanowires |
| ZHANG Dong-Dong, XUE Cheng-Shan, ZHUANG Hui-Zhao, HUANG Ying-Long, WANG Zou-Ping, WANG Ying, GUO Yong-Fu |
| Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014 |
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| Cite this article: |
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ZHANG Dong-Dong, XUE Cheng-Shan, ZHUANG Hui-Zhao et al 2008 Chin. Phys. Lett. 25 4158-4161 |
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Abstract Mg-doped GaN nanowires have been synthesized by ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere at 850°C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20-30nm and the lengths are 50-100μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45eV, 3.26eV, 2.95eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein--Moss effect. The peak at 3.26eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly.
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81.05.Ea
62.23.Hj
81.15.Cd
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Received: 25 June 2008
Published: 25 October 2008
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