Chin. Phys. Lett.  2008, Vol. 25 Issue (11): 4109-4112    DOI:
Original Articles |
Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses
HU Shi-Gang, CAO Yan-Rong, HAO Yue, MA Xiao-Hua, CHEN Chi, WU Xiao-Feng, ZHOU Qing-Jun
1School of Microelectronics, Xidian University, Xi'an 7100712Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
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HU Shi-Gang, CAO Yan-Rong, HAO Yue et al  2008 Chin. Phys. Lett. 25 4109-4112
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Abstract

Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.

Keywords: 73.40.Qv      85.30.Tv     
Received: 10 May 2008      Published: 25 October 2008
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I11/04109
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Articles by authors
HU Shi-Gang
CAO Yan-Rong
HAO Yue
MA Xiao-Hua
CHEN Chi
WU Xiao-Feng
ZHOU Qing-Jun
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