Original Articles |
|
|
|
|
Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses |
HU Shi-Gang, CAO Yan-Rong, HAO Yue, MA Xiao-Hua, CHEN Chi, WU Xiao-Feng, ZHOU Qing-Jun |
1School of Microelectronics, Xidian University, Xi'an 7100712Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 |
|
Cite this article: |
HU Shi-Gang, CAO Yan-Rong, HAO Yue et al 2008 Chin. Phys. Lett. 25 4109-4112 |
|
|
Abstract
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.
|
Keywords:
73.40.Qv
85.30.Tv
|
|
Received: 10 May 2008
Published: 25 October 2008
|
|
PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
85.30.Tv
|
(Field effect devices)
|
|
|
|
|
[1] Cao Y R, Hao Y, Ma X H, Yu L and Hu S G 2008 Chin. Phys. Lett. 25 1427 [2] Dimaria D J and Cartier E 1995 J. Appl. Phys. 78 3883 [3] Buchanan D A, Stathis J H, Cartier E and DiMaria D J 1997 Microelect. Eng. 36 329 [4] Alam M A 2002 IEEE Trans. Electron Devices 49 226 [5] Rodriguez R, Miranda E, Pau R, Sune J, Nafria M and Aymerich X 2000 IEEE Electron Dev. Lett. 21 251 [6] Hu C and Lu Q 1999 IEEE international Reliability Physics Symposium (California 23--25 March 1999) p 47 [7] Mcpherson J W, Khamankar R B and Shanware A 2000 J. Appl. Phys. 88 5351 [8] Umeda K and Taniguchi K 1997 J. Appl. phys. 82 287 [9] Depas M, Nigam T, and Heyns M M 1999 IEEE Trans. Electron Devices 43 499 [10] Okada K and Taniguchi K 1997 Appl. Phys. Lett. 70 35 [11] Houssa M, Nigam T, Mertens P W, and Heyns M M 1998 Appl. Phys. Lett. 84 4351 [12] Guan H, Cho B J, Li M F, Xu Z, He Y D, and Dong Z 2001 IEEE Trans. Electron Devices 48 1010 [13] Loh W Y, Cho B J and Li M F 2002 J. Appl. Phys. 91 5302 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|