Chin. Phys. Lett.  2008, Vol. 25 Issue (11): 4097-4100    DOI:
Original Articles |
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
LIN Guo-Qiang, ZENG Yi-Ping, WANG Xiao-Liang, LIU Hong-Xin
Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Cite this article:   
LIN Guo-Qiang, ZENG Yi-Ping, WANG Xiao-Liang et al  2008 Chin. Phys. Lett. 25 4097-4100
Download: PDF(643KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm.
Keywords: 72.80.Ey      81.15.Gh      61.14.Hg     
Received: 15 April 2008      Published: 25 October 2008
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  61.14.Hg  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I11/04097
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LIN Guo-Qiang
ZENG Yi-Ping
WANG Xiao-Liang
LIU Hong-Xin
[1] Porowski S and Grzegory I 1997 J. Cryst. Growth
178 174
[2] Inoue T et al 2001 J. Cryst. Growth 229 35
[3] Yang B et al 1998 J. Appl. Phys. 83 3800
[4] Lebedev V et al 2000 Appl. Phys. Lett. 76 2029
[5] Nikishin S A et al 1999 Appl. Phys. Lett. 75
2073
[6] Kim M H et al 2001 Appl. Phys. Lett. 79 2713
[7] Yu H Q et al 2004 Chin. Phys. Lett. 21 1825
[8] Wang J F et al 2006 Chin. Phys. Lett. 23 2591
[9] Gil B 1998 Group III Nitride Semiconductor Compounds
p 88
[10] Zhang B S et al 2003 J. Cryst. Growth 258 34
[11] Foxon C T et al 1999 Phys. Status Solidi A
176 723
[12] Okumura H et al 1998 J. Cryst. Growth 189 364
[13] Ferro G et al 2000 J. Cryst. Growth 210 429
[14] Cong G W et al 2005 J. Cryst. Growth 276 381
[15] Pophristic M et al 1999 Appl. Phys. Lett. 74
3519
[16] Wang L S et al 2004 Appl. Phys. Lett. 85 5881
Related articles from Frontiers Journals
[1] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 4097-4100
[2] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 4097-4100
[3] CAO Xiao-Long, WANG Yu-Ye, XU De-Gang, **, ZHONG Kai, LI Jing-Hui, LI Zhong-Yang, ZHU Neng-Nian, YAO Jian-Quan,. THz-Wave Difference Frequency Generation by Phase-Matching in GaAs/AlxGa1−xAs Asymmetric Quantum Well[J]. Chin. Phys. Lett., 2012, 29(1): 4097-4100
[4] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 4097-4100
[5] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 4097-4100
[6] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 4097-4100
[7] LIU Sheng-Hou, CAI Yong**, GONG Ru-Min, WANG Jin-Yan, ZENG Chun-Hong, SHI Wen-Hua, FENG Zhi-Hong, WANG Jing-Jing, YIN Jia-Yun, Cheng P. Wen, QIN Hua, ZHANG Bao-Shun . Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure[J]. Chin. Phys. Lett., 2011, 28(7): 4097-4100
[8] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 4097-4100
[9] Sur S., Ö, ztürk Z., Ö, zta&scedil, M.**, Bedir M., Ö, zdemir Y. . Effect of Water Concentration on the Characterization of Sprayed Cd0.5Zn0.5S Films[J]. Chin. Phys. Lett., 2011, 28(6): 4097-4100
[10] CHEN Yi-Xin**, SHEN Guang-Di, ZHU Yan-Xu, GUO Wei-Ling, LI Jian-Jun . Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors[J]. Chin. Phys. Lett., 2011, 28(6): 4097-4100
[11] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 4097-4100
[12] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 4097-4100
[13] HOU Qi-Feng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. Chin. Phys. Lett., 2011, 28(3): 4097-4100
[14] YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing** . Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 4097-4100
[15] ZHOU Zhi-Feng, QIN Fu-Wen, **, ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 4097-4100
Viewed
Full text


Abstract