Chin. Phys. Lett.  2008, Vol. 25 Issue (11): 4083-4085    DOI:
Original Articles |
High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN
ZHANG Yue-Zong, FENG Shi-Wei, GUO Chun-Sheng, ZHANG Guang-Chen, ZHUANG Si-Xiang, SU Rong, BAI Yun-Xia, LU Chang-Zhi
School of Electron Information and Control Engineering, Beijing University of Technology, Beijing 100022
Cite this article:   
ZHANG Yue-Zong, FENG Shi-Wei, GUO Chun-Sheng et al  2008 Chin. Phys. Lett. 25 4083-4085
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Abstract

We present the high-temperature characteristics of Ti/Al/Ni/Au(15nm/220nm/40nm/50nm) multiplayer contacts to n-type GaN (Nd=3.7×1017cm-3, Nd=3.0×1018cm-3). The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the Al layer even the Ti layer.

Keywords: 61.82.Bg     
Received: 26 May 2008      Published: 25 October 2008
PACS:  61.82.Bg (Metals and alloys)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I11/04083
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Articles by authors
ZHANG Yue-Zong
FENG Shi-Wei
GUO Chun-Sheng
ZHANG Guang-Chen
ZHUANG Si-Xiang
SU Rong
BAI Yun-Xia
LU Chang-Zhi
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[5] Zhou H M et al 2002 Chin. J. Semiconduct. 23
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[9] Yu A Y C, 1970 Solid-State Electron. 13 239
[10] Chang C Y et al 1971 Solid-State Electron. 14
541
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