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Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies |
LU Xue-Hui1, KANG Lin1, ZHOU Lei1, CHEN Jian1, JI Zheng-Ming1, CAO Chun-Hai1, JIN Biao-Bing1, XU Wei-Wei1, WU Pei-Heng1, WANG Xiao-Shu2 |
1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Center for Materials Analysis, Nanjing University, Nanjing 210093 |
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Cite this article: |
LU Xue-Hui, KANG Lin, ZHOU Lei et al 2008 Chin. Phys. Lett. 25 4076-4078 |
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Abstract Niobium is sputtered onto a single crystalline silicon substrate in N2:Ar=4:1 gas mixture at the total pressure of 2Pa. The temperature coefficient of resistance of the sample is about 0.5% at 300K, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2μm×2μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb3+ and Nb5+, or Nb4+.
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Keywords:
61.05.-a
65.80.-n
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Received: 13 June 2008
Published: 25 October 2008
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