Chin. Phys. Lett.  2008, Vol. 25 Issue (11): 4076-4078    DOI:
Original Articles |
Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies
LU Xue-Hui1, KANG Lin1, ZHOU Lei1, CHEN Jian1, JI Zheng-Ming1, CAO Chun-Hai1, JIN Biao-Bing1, XU Wei-Wei1, WU Pei-Heng1, WANG Xiao-Shu2
1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Center for Materials Analysis, Nanjing University, Nanjing 210093
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LU Xue-Hui, KANG Lin, ZHOU Lei et al  2008 Chin. Phys. Lett. 25 4076-4078
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Abstract Niobium is sputtered onto a single crystalline silicon substrate in N2:Ar=4:1 gas mixture at the total pressure of 2Pa. The temperature coefficient of resistance of the sample is about 0.5% at 300K, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2μm×2μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb3+ and Nb5+, or Nb4+.
Keywords: 61.05.-a      65.80.-n     
Received: 13 June 2008      Published: 25 October 2008
PACS:  61.05.-a (Techniques for structure determination)  
  65.80.-n  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I11/04076
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LU Xue-Hui
KANG Lin
ZHOU Lei
CHEN Jian
JI Zheng-Ming
CAO Chun-Hai
JIN Biao-Bing
XU Wei-Wei
WU Pei-Heng
WANG Xiao-Shu
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16 1417
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[13] NIST 2007 X-ray Photoelectron Spectroscopy Database
v3.5 (USA)
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