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Phase Noise of Optically Generated Microwave Using Sideband Injection Locking |
HUANG Jin, SUN Chang-Zheng, SONG Yu, XIONG Bing, LUO Yi |
State Key Lab on Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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Cite this article: |
HUANG Jin, SUN Chang-Zheng, SONG Yu et al 2008 Chin. Phys. Lett. 25 3980-3983 |
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Abstract Optically generated 20-GHz microwave carriers with phase noise lower than -75dBc/Hz at 10kHz offset and lower than -90dBc/Hz at 100kHz offset are obtained using single- and double-sideband injection locking. Within the locking range, the effect of sideband injection locking can be regarded as narrow-band amplification of the modulation sidebands. Increasing the current of slave laser will increase the power of beat signal and reduce the phase noise to a certain extent. Double-sideband injection locking can increase the power of the generated microwave carrier while keeping the phase noise at a low level. It is also revealed that partially destruction of coherence between the two beating lights in the course of sideband injection locking would impair the phase noise performance.
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Keywords:
42.55.-f
42.55.Px
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Received: 17 June 2008
Published: 25 October 2008
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[1] Kitayama K 2000 Fiber Integrat. Opt. 19 167 [2] Seeds A J and Williams K J 2006 J. Lightwave Technol. 24 4628 [3] Ogusu M, Inagaki K and Ohira T 2000 Electron. Lett. 36 2102 [4] Bauer S, Brox O, Kreissl J, Sahin G and Sartorious B 2002 Electron. Lett. 38 334 [5] Braun R P, Grosskopf G, Rohde D and Schmidt F 1998 IEEE Photon. Technol. Lett. 10 728 [6] Ogusu M, Inagaki K and Mizuguchi Y 2001 IEEE Microwave Wireless Components Lett. 11 101 [7] Kim D Y, Pelusi M, Ahmed Z, Novak D, Liu H F and Ogawa Y 1995 Electron. Lett. 31 733 [8] Johansson L A and Seeds A J 2000 IEEE Photon. Technol. Lett. 12 690 [9] Chen L, Pi Y, Wen H and Wen S 2006 Microwave Opt. Technol. Lett. 49 1265 [10] Wang T, Chen M, Chen H, Zhang J and Xie S 2007 IEEE Photon. Technol. Lett. 19 1191 [11] Braun R P, Grosskopf G, Meschenmoser R, Rohde D and Schmidt F 1997 Electron. Lett. 33 1395 [12] Laperle C, Svilans M, Poirier M and T\^{etu M 1999 IEEE Trans. Microwave Theor. Tech. 47 1219 [13] Richter L E, Mandelberg H I, Kruger M S and McGrath P A 1986 IEEE J. Quantum Electron. 22 2070 |
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