| Original Articles |
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Theoretical Analysis of Current Crowding Effect in Metal/AlGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode |
| CHEN Jia-Rong;CHEN Wen-Jin;WANG Yu-Qi;QIU Kai;LI Xin-Hua; ZHONG Fei;YIN Zhi-Jun;JI Chang-Jian;CAO Xian-Cun;HAN Qi-Feng;DUAN Cheng-Hong;ZHOU Xiu-Ju |
| Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 |
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| Cite this article: |
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CHEN Jia-Rong, CHEN Wen-Jin, WANG Yu-Qi et al 2007 Chin. Phys. Lett. 24 2112-2114 |
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Abstract There exists a current crowding effect in the anode of AlGaN/GaN heterojunction Schottky diodes, causing local overheating when working at
high power density, and undermining their performance. The seriousness
of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.
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| Keywords:
81.05.Ea
85.30.De
82.20.Wt
73.40.Lq
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Received: 05 December 2006
Published: 25 June 2007
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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82.20.Wt
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(Computational modeling; simulation)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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