| Original Articles |
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Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy |
FAN Hai-Bo;YANG Shao-Yan;ZHANG Pan-Feng;WEI Hong-Yuan;LIU Xiang-Lin,
JIAO Chun-Mei;ZHU Qin-Sheng;CHEN Yong-Hai;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 |
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| Cite this article: |
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FAN Hai-Bo, YANG Shao-Yan, ZHANG Pan-Feng et al 2007 Chin. Phys. Lett. 24 2108-2111 |
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Abstract ZnO films prepared at different temperatures and annealed at 900°C in
oxygen are studied by photoluminescence (PL) and x-ray photoelectron
spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (VO) and interstitial oxygen (Oi) before annealing and the quenching of the VO after annealing. By combining the two results it is deduced that the GL and YL are related to the VO and Oi defects, respectively.
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| Keywords:
81.05.Dz
81.15.Gh
82.80.Pv
61.72.Ji
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Received: 11 April 2007
Published: 25 June 2007
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| PACS: |
81.05.Dz
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(II-VI semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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61.72.Ji
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