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Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers |
| YAO Fei;XUE Chun-Lai;CHENG Bu-Wen;WANG Qi-Ming |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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YAO Fei, XUE Chun-Lai, CHENG Bu-Wen et al 2007 Chin. Phys. Lett. 24 1686-1689 |
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Abstract Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain--Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.
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| Keywords:
71.20.Nr
71.55.Ak
71.70.Fk
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Received: 14 March 2007
Published: 17 May 2007
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