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Electron Transport in Ga-Rich InxGa1-xN Alloys |
| A. Yildiz1;S. B. Lisesivdin2;S. Acar2;M. Kasap2;M. Bosi3 |
| 1Department of Physics, Ahi Evran University, Kirsehir, Turkey2Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey3CNR-IMEM Institute, Area delle Scienze 37/A, I-43010 Fontanini, Parma, Italy |
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A. Yildiz, S. B. Lisesivdin, S. Acar et al 2007 Chin. Phys. Lett. 24 2930-2933 |
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Abstract Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06≤x≤e 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15--350K). Within the experimental error, the electron concentration in InxGa1-xN
alloys is independent of temperature while the resistivity decreases as
the temperature increases. Therefore, InxGa1-xN (0.06≤x≤0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron--electron interactions and weak localization effects.
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| Keywords:
72.20.My
72.20.Fr
72.80.Ey
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Received: 28 February 2007
Published: 20 September 2007
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| PACS: |
72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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72.80.Ey
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(III-V and II-VI semiconductors)
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