Original Articles |
|
|
|
|
Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method |
CEN Zhan-Hong;XU Jun;LIU Yan-Song;HAN Pei-Gao;LI Wei;HUANG Xin-Fan;CHEN Kun-Ji |
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
|
Cite this article: |
CEN Zhan-Hong, XU Jun, LIU Yan-Song et al 2006 Chin. Phys. Lett. 23 1029-1031 |
|
|
Abstract KrF excimer laser annealing on ultrathin hydrogenated amorphous Si films with various initial Si thicknesses is carried out to obtain a single layer of nanocrystalline Si structures. It is found that Si nanograins can be obtained with the area density as high as 1011cm-2 under the irradiation with suitable laser fluence. Raman and planar transmission electron microscopy are used to characterize the formation process of Si nanocrystals from amorphous phase. Moreover, a strong photoluminescence is observed at room temperature from well-relaxed nanocrystalline Si structures.
|
Keywords:
81.07.Bc
81.16.Mk
78.55.Ap
|
|
Published: 01 April 2006
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|