Chin. Phys. Lett.  2006, Vol. 23 Issue (4): 1029-1031    DOI:
Original Articles |
Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method
CEN Zhan-Hong;XU Jun;LIU Yan-Song;HAN Pei-Gao;LI Wei;HUANG Xin-Fan;CHEN Kun-Ji
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
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CEN Zhan-Hong, XU Jun, LIU Yan-Song et al  2006 Chin. Phys. Lett. 23 1029-1031
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Abstract KrF excimer laser annealing on ultrathin hydrogenated amorphous Si films with various initial Si thicknesses is carried out to obtain a single layer of nanocrystalline Si structures. It is found that Si nanograins can be obtained with the area density as high as 1011cm-2 under the irradiation with suitable laser fluence. Raman and planar transmission electron microscopy are used to characterize the formation process of Si nanocrystals from amorphous phase. Moreover, a strong photoluminescence is observed at room temperature from well-relaxed nanocrystalline Si structures.
Keywords: 81.07.Bc      81.16.Mk      78.55.Ap     
Published: 01 April 2006
PACS:  81.07.Bc (Nanocrystalline materials)  
  81.16.Mk (Laser-assisted deposition)  
  78.55.Ap (Elemental semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I4/01029
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CEN Zhan-Hong
XU Jun
LIU Yan-Song
HAN Pei-Gao
LI Wei
HUANG Xin-Fan
CHEN Kun-Ji
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