| Original Articles |
|
|
|
|
Energy Variable Slow Positron Beam Study of Li+-Implantation-Induced Defects in ZnO |
| CHEN Zhi-Quan1;M. Maekawa2;A. Kawasuso2 |
| 1Department of Physics, Wuhan University, Wuhan 430072
2Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan |
|
| Cite this article: |
|
CHEN Zhi-Quan, M. Maekawa, A. Kawasuso 2006 Chin. Phys. Lett. 23 675-677 |
|
|
|
|
Abstract ZnO films grown on sapphire substrates are implanted with 100-keV Li ions up to a total dose of 1×10-16 cm-2. Vacancy-type defects, mostly vacancy clusters, are observed by positron annihilation measurements after implantation. Upon annealing, they first have an agglomeration process which leads to the growth in the vacancy size. After annealing at about 500°C, vacancy clusters grow into microvoids, which is indicated by the positronium formation. With annealing temperature increases to above 500°C, the microvoids begin to recover, and finally all the implantation-induced vacancy defects are removed at 1000°C. No Li nanoclusters can be observed after Li+ implantation.
|
| Keywords:
61.80.Jh
61.72.Ji
78.70.Bj
|
|
|
Published: 01 March 2006
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
