| Original Articles |
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NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System |
| YUE Shuang-Lin;LUO Qiang;SHI Cheng-Ying;YANG Hong-Xin;WANG Qiang;XU Peng;GU Chang-Zhi |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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YUE Shuang-Lin, LUO Qiang, SHI Cheng-Ying et al 2006 Chin. Phys. Lett. 23 678-681 |
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Abstract By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.
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| Keywords:
68.55.-a
81.40.Ef
81.15.Cd
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Published: 01 March 2006
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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81.15.Cd
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(Deposition by sputtering)
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