Chin. Phys. Lett.  2006, Vol. 23 Issue (3): 678-681    DOI:
Original Articles |
NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System
YUE Shuang-Lin;LUO Qiang;SHI Cheng-Ying;YANG Hong-Xin;WANG Qiang;XU Peng;GU Chang-Zhi
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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YUE Shuang-Lin, LUO Qiang, SHI Cheng-Ying et al  2006 Chin. Phys. Lett. 23 678-681
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Abstract By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.

Keywords: 68.55.-a      81.40.Ef      81.15.Cd     
Published: 01 March 2006
PACS:  68.55.-a (Thin film structure and morphology)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
  81.15.Cd (Deposition by sputtering)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I3/0678
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YUE Shuang-Lin
LUO Qiang
SHI Cheng-Ying
YANG Hong-Xin
WANG Qiang
XU Peng
GU Chang-Zhi
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