| Original Articles |
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Atomic and Electronic Structures of Cd0.96Zn0.04Te(110) Surface |
| ZHA Gang-Qiang;JIE Wan-Qi;ZHANG Wen-Hua;LI Qiang;XU Fa-Qiang |
| State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 |
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| Cite this article: |
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ZHA Gang-Qiang, JIE Wan-Qi, ZHANG Wen-Hua et al 2005 Chin. Phys. Lett. 22 2357-2359 |
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Abstract X-Ray diffraction is used to analyse the lattice structure of CdCd0.96Zn0.04Te (CZT), and the lattice constant is measured to be 0.647nm. The atomic structure of the clean CZT(110) surface obtained by Ar+ etching in vacuum is observed by low-energy electron diffraction, where no surface reconstruction is discovered. Angle-resolved photoemission spectroscopy was used to characterize the surface state of the clean CZT (110) surface, by which we find a 1.5-eV-wide surface band with the peak at 0.9eV below the Fermi energy containing about 6.9×1014 electrons/cm2, approximately one electron per surface atom.
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| Keywords:
71.55.Gs
73.20.At
82.45.Jn
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Published: 01 September 2005
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| PACS: |
71.55.Gs
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(II-VI semiconductors)
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73.20.At
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(Surface states, band structure, electron density of states)
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82.45.Jn
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(Surface structure, reactivity and catalysis)
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