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Quenched Charmed Meson Spectra Using Tadpole Improved Quark Action on Anisotropic Lattices
LIU Liu-Ming, SU Shi-Quan, LI Xin, LIU Chuan
Chin. Phys. Lett. 2005, 22 (9):
2198-2200
.
Charmed meson charmonium spectra are studied with improved quark actions on anisotropic lattices. We measured the pseudo-scalar and vector meson dispersion relations for four lowest lattice momentum modes with quark mass values ranging from the strange quark to charm quark with three different values of gauge coupling β and four different values of bare speed of light v. With the bare speed of light parameter v tuned in a mass-dependent way, we study the mass spectra of D, Ds, ηc, D*, Dx* and J/ψ mesons. The results extrapolated to the continuum limit are compared with the experiment, and a qualitative agreement is found.
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Identification of New β-Delayed γ Rays and a Low-Spin Isomer in 176Ir
WANG Hua-Lei, ZHANG Yu-Hu, ZHOU Xiao-Hong, GUO Ying-Xiang, LEI Xiang-Guo, XU Shu-Wei, XIE Yuan-Xiang, LIU Min-Liang, ZHENG Yong, XING Ye-Bing, XIE Cheng-Ying, SONG Li-Tao, LUO Peng, YU Hai-Ping, GUO Wen-Tao
Chin. Phys. Lett. 2005, 22 (9):
2211-2214
.
The β+/EC decay of doubly odd nucleus 176Ir has been studied via the 146Nd(35Cl, 5nγ) heavy ion fusion evaporation reaction at 210MeV bombarding energy. With the aid of a helium-jet recoil fast tape transport system, the reaction products were transported to a low-background location for measurement. Based on the data analysis, the previously known γ rays from the decay of 176Ir are proven. Moreover, three new excited levels and ten new γ rays are assigned to 176Os. The time spectra of typical γ rays clearly indicate a long-lived low-spin isomer in 176Ir.
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Measurement of 2H(8Li,9Be)n Reaction Relevant to Primordial Nucleosynthesis
ZENG Sheng, LIU Wei-Ping, LI Zhi-Hong, BAI Xi-Xiang, YAN Sheng-Quan, WANG Bao-Xiang, LIAN Gang, SU Jun
Chin. Phys. Lett. 2005, 22 (9):
2219-2221
.
The angular distribution of the 2H(8Li, 9Be)n (ground state) reaction, important to primordial nucleosynthesis in the inhomogeneous model, has been measured at Ec.m=8.1MeV using a secondary 8Li beam. Cross section of this reaction was determined to be 9.0±3.4mb. According to the cross section, the astrophysical S-factor was calculated to be 272±103keV b. It is shown that 2H(8Li, 9Be)n (ground state) reaction is important for creating 9Be, but less important for destroying 8Li in primordial nucleosynthesis.
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L$-Shell Ionization Cross Section Measurements of Dysprosium and Samarium by Low-Energy Electron Impact
GOU Cheng-Jun, WU Zhang-Wen, YANG Dai-Lun, HE Fu-Qing, PENG Xiu-Feng, AN Zhu, LUO Zheng-Ming
Chin. Phys. Lett. 2005, 22 (9):
2244-2247
.
The Lα, Lβ and Lγ x-ray production cross sections of Dy and Sm by electron impact are measured at energies from near threshold to tens of keV. In the experiments, thin targets with thick substrates are used. Meanwhile, the electron transport bipartition model is used to eliminate the influence of electrons reflected from the thick substrates on measurements. The measured x-ray production cross sections are also compared with the theoretical predictions by Gryzinski and McGuire.
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Typical Microstructures of Chinese Medicines with X-Ray Microscopy in Phase Contrast
WEI Xun, XIAO Ti-Qiao, LIU Li-Xiang, DU Guo-Hao, CHEN Min, LUO Yu-Yu, XU Hong-Jie
Chin. Phys. Lett. 2005, 22 (9):
2255-2258
.
Due to the low absorption contrast of plant tissues, traditional x-ray radiography has not been included in the microscopic techniques used in the identification of traditional Chinese medicines (TCMs). With the development of x-ray phase contrast imaging (XPCI) in recent years, weakly absorbing materials could also be imaged by x-rays. Here we investigate microstructures of TCMs utilizing XPCI based on a nano-focus x-ray tube. The results demonstrated that XPCI is capable of revealing the microstructures of TCMs used as judging criteria in the identification of TCMs. The major advantages of the new method are nondestructivity, no special demand for sample preparation and suitability for thick samples.
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Diode Stack End-Pumped Nd:GdVO4 Continuous Wave Slab Laser
ZHANG Heng-Li, ZHANG Huai-Jin, LI Dai-Jun, WANG Ji-Yang, SHI Peng, Haas R\"udiger, LI Hong-Xia, JIANG Min-Hua, DU Keming
Chin. Phys. Lett. 2005, 22 (9):
2276-2277
.
We report a diode stack end-pumped Nd:GdVO4 slab laser with a near-diffraction-limited beam. The output power of 45.8W at 1064nm is obtained under the pumping power of 147W, with the optical-optical conversion efficiency of 31.2%, and the slope efficiency is 39.6%.
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Large Third-Order Optical Nonlinearity and Fast Response of a Squarylium Dye
LI Zhong-Yu, JIN Zhao-Hui, KASATANI Kazuo, OKAMOTO Hiroaki
Chin. Phys. Lett. 2005, 22 (9):
2282-2285
.
The third-order optical nonlinearities and responses of a squarylium dye, 2,4-di-3-guaiazulenyl-1,3-dihydroxycyclo\-butenediylium dihydroxide, in tetrahydrofuran (THF) solution and in polystyrene (PS) coating films are measured by the femtosecond degenerate four-wave mixing technique under resonant conditions. The molecular hyperpolarizability g of the squarylium dye in the THF solution is determined to be 3.0 × 10-29,esu at 764nm, and its electronic component γe is determined to be 1.1 × 10-29esu. The third-order nonlinear susceptibility x(3) of one of the present PS coating films containing the squarylium dye is as high as 3.1 × 10-8esu at 800nm, and its electronic component x(3)-e is 1.3 × 10-8esu.
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Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
QIN Qi, GUO Li-Wei, ZHOU Zhong-Tang, CHEN Hong, DU Xiao-Long, MEI Zeng-Xia, JIA Jin-Feng, XUE Qi-Kun, ZHOU Jun-Ming
Chin. Phys. Lett. 2005, 22 (9):
2298-2301
.
Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 570nm are observed under forward bias. An unusual emission at 390nm appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 570nm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.
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Thermal Properties of Materials Characterized by Scanning Electron-Acoustic Microscopy
GAO Chun-Ming, ZHANG Shu-Yi, ZHANG Zhong-Ning, SHUI Xiu-Ji, JIANG Tao
Chin. Phys. Lett. 2005, 22 (9):
2309-2312
.
A modified technique of scanning electron-acoustic microscopy is employed to determine thermal diffusivity of materials. Using the dependence of the electron-acoustic signal on modulation frequency of the electron beam, the thermal diffusivity of materials is characterized based on a simplified thermoelastic theory. The thermal diffusivities of several metals characterized by the modified scanning electron-acoustic microscopy are in good agreement with the referential values of the corresponding materials, which proves that the scanning electron-acoustic microscopy can be used to characterize the thermal diffusivity of materials effectively. In addition, for micro-inhomogeneous materials, such as biological tissues, the macro-effective (average) thermal diffusivities are characterized by the technique.
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Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature
DING Wan-Yu, XU Jun, PIAO Yong, LI Yan-Qin, GAO Peng, DENG Xin-Lu, DONG Chuang
Chin. Phys. Lett. 2005, 22 (9):
2332-2334
.
Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the Nx flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9GPa, could be obtained at lower Nx flow rate of 4sccm.
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Step Structure in Cold-Rolled Deformed Nanocrystalline Nickel
ZHANG Xi-Yan, WU Xiao-Lei, XIA Bao-Yu, ZHOU Ming-Zhe, ZHOU Shi-Jie, JIA Chong
Chin. Phys. Lett. 2005, 22 (9):
2335-2337
.
The microstructure characteristic of the cold-rolled deformed nanocrystalline nickel metal is studied by transmission electron microscopy. The results show that there are step structures nearby the grain boundary (GB), and the contrast of stress field in front of the step corresponds to the step in the shape. It is indicated that the interaction between twins and dislocations is not a necessary condition to realizing the deformation. In the later stage of the deformation when the grain size becomes about 100nm, the deformation can depend upon the moving of the boundary of the stack faults (SFs) which result from the partial dislocations emitted from GBs. However, when the size of SFs grows up, the local internal stress which is in front of the step gradually becomes higher. When this stress reaches a critical value which stops the gliding of the partial dislocations, the SFs will stop to grow up and leave a step structure behind.
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Quantitative Mobility Spectrum Analysis for Determination of Electron and Magneto Transport Properties of Te-Doped GaSb
S. Acar, M. Kasap, B. Y. Isik, S. Ö, zcelik, N. Tugluoglu, S. Karadeniz
Chin. Phys. Lett. 2005, 22 (9):
2363-2366
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Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralsk technique are carried out as functions of temperature (35--350K) and magnetic field (0--1.35T). The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters (nL, nΓ, μL, μΓ, p and μp) on both the electron and magneto transports have been discussed. The EL-EG energy separation between the L and Γ conduction band edges is also derived.
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Figure of Merit for Detectors Based on Laser-Induced hermoelectric Voltages in La1-xCaxMnO3 and Ba2Cu3O7-σ Thin Films
ZHANG Guo-Yong, ZHANG Peng-Xiang, ZHANG Hui, LEE Wing-Kee
Chin. Phys. Lett. 2005, 22 (9):
2379-2381
.
A figure of merit (FOM) Z = Up/τr, where Up is the peak voltage, and τr is the rise time of the laser-induced thermoelectric voltage (LITV) signal, is defined for photodetector based on the LITV and the influence of the parameters on FOM is analysed based on the time dependence of LITVs in La1-xCaxMnO3 (LCMO) and YBa2Cu3O7-σ (YBCO) thin films grown on vicinal-cut substrates. We find that the FOM increases as the photon penetration depth decreases, and linearly increases with the thermal diffusion constant D. To achieve the highest FOM, the film thickness d has to be controlled to an optimum value. We also find that the FOM is directly proportional to the laser absorption coefficient α0, the laser energy density per pulse E, the illuminated length of film l, sin(2α) [αis the vicinal-cut angle], the Seebeck coefficient anisotropy (Sab - Sc ), and is inversely proportional to the mass density ρ and the specific heat c0.
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Raman Active Phonons in RCoO3 (R=La, Ce, Pr, Nd, Sm, Eu, Gd, and Dy) Perovskites
WANG Wei-Ran, XU Da-Peng, SU Wen-Hui, , DING Zhan-Hui, XUE Yan-Feng, SONG Geng-Xin,
Chin. Phys. Lett. 2005, 22 (9):
2400-2402
.
We examine RCoO3 (R=La, Ce, Pr, Nd, Sm, Eu, Gd, and Dy) perovskites prepared with the solid-state reaction method by Raman spectroscopy, and report the Raman active phonons in the RCoO3 perovskites crystallized in cubic symmetry for RCoO3 (R=La, Ce, Pr and Nd) and orthorhombic symmetry for RCoO3 (R=Sm, Eu, Gd, and Dy). It is found that the Raman spectra of RCoO3 perovskites are strongly dependent on the ionic radius of the rare earth elements, and the frequency shift of the most intense modes of the orthorhombic samples are correlated with some structural parameters such as Co--O bond distances, ionic radius of the rare earth elements and Jahn--Teller distortion. It is clear that Raman spectroscopy has the advantage of sensitivity to structure distortion and oxygen motion.
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Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers
CUI Can, YANG De-Ren, MA Xiang-Yang, FU Li-Ming, FAN Rui-Xin, QUE Duan-Lin
Chin. Phys. Lett. 2005, 22 (9):
2407-2410
.
Oxygen precipitation within the magic denuded zone (MDZ) founded by rapid thermal processing in Czochralski silicon (CZ-Si) wafers is investigated. After the standard MDZ process, the CZ-Si wafers are further subjected to two specific oxygen precipitation annealing, respectively. It is found that the MDZs in CZ-Si wafers shrunk notably because oxygen precipitation occurs within the MDZs. However, a width of substantial DZ still remains within the wafer. Therefore, it is believed that the outer region of the MDZs, which corresponds to the oxygen denuded zone formed in the course of rapid thermal process and high temperature annealing, is a substantial defect-free zone which acts as the active area for semiconductor devices.
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Synthesis and Field Emission of ZnO Nanostructures on CuO Catalyzed Porous Silicon Substrate
YU Ke, ZHANG Yong-Sheng, OUYANG Shi-Xi, ZHANG Qing-Jie, LUO Lai-Qiang, ZHANG Qiu-Xiang, CHANG Zhong-Kun, LI Li-Jun, ZHU Zi-Qiang
Chin. Phys. Lett. 2005, 22 (9):
2411-2414
.
Mass production of ZnO nanobelts and hexagonal nanorods has been successfully synthesized on CuO catalyzed porous silicon (PS) using a simple vapour--solid (VS) growth method. A comparison of their morphologies is investigated by scanning electron microscopy (SEM). The transmission electron microscopy (TEM) confirms that ZnO nanobelts and nanorods are single crystalline with the growth direction of (0110) and (0001), respectively. Field emission tests indicate that the ZnO nanostructures on porous silicon have low turn-on field of about 3.6V/μm (at 1.0μA/cm2) and the threshold field of about 8.3V/μm (at 1.0mA/cm2), high emission site density (ESD) of approximately 104cm-2.
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Effect of Regrown Graphite on the Growth of Large Gem Diamonds by Temperature Gradient Method
ZANG Chuan-Yi, JIA Xiao-Peng, MA Hong-An, TIAN Yu, XIAO Hong-Yu
Chin. Phys. Lett. 2005, 22 (9):
2415-2417
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Generally, when growing high-quality large gem diamond crystals by temperature gradient method under high pressure and high temperature, the crystal growth rate is only determined by the temperature gradient. However, we find that the seed crystal cannot completely absorb all the diffused carbon sources, when growing gem diamonds under a higher temperature gradient. Other influence factors appear, and the growth rate of growing diamonds is partly dependent on the crystalline form of superfluous unabsorbed carbon source, flaky regrown graphite or small diamond crystals nucleated spontaneously. The present form is determined by the growth temperature if the pressure is fixed. Different from spontaneous diamond nuclei, the appearance of regrown graphite in the diamond-stable region can retard the growth rate of gem diamonds substantially, even if the temperature gradient keeps unchanged. On the other hand, the formation mechanism of metastable regrown graphite in the diamond-stable region is also explained.
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Investigation of a Microcalorimeter for Thin-Film Heat Capacity Measurement
YU Jun, TANG Zhen-An, ZHANG Feng-Tian, WEI Guang-Fen, WANG Li-Ding
Chin. Phys. Lett. 2005, 22 (9):
2429-2432
.
A microcalorimeter is studied for testing heat capacity of thin films. The microcalorimeter is a suspended membrane supported by six microbridges, which is fabricated by the front-side surface micromachining. Compared to the bulk micro-machined one, the microcalorimeter has excellent mechanical strength and precisely controlled pattern size as well as good thermal characteristics that are essential to a microcalorimeter. The heating rate of the microcalorimeter is up to 2×105K/s with 4.5mW heating power in vacuum, and the heat capacity of the corresponding empty microcalorimeter is about 23.4nJ/K at 300K. By a pulse calorimetry, the heat capacity of Al thin films with thickness of 40--1150nm are measured in the temperature range from 300K to 420K in vacuum. The mass of each sample is evaluated and the specific heat capacity is calculated. The results show that specific heat capacity of the 1150-nm Al film agrees well with the data of bulk Al reported in the literature. For the thinner films, enhanced heat capacity is observed.
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87 articles
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