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Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature |
| DING Wan-Yu;XU Jun;PIAO Yong;LI Yan-Qin;GAO Peng;DENG Xin-Lu;DONG Chuang |
| State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 |
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| Cite this article: |
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DING Wan-Yu, XU Jun, PIAO Yong et al 2005 Chin. Phys. Lett. 22 2332-2334 |
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Abstract Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the Nx flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9GPa, could be obtained at lower Nx flow rate of 4sccm.
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| Keywords:
52.77.Dq
81.15.Cd
81.65.Kn
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Published: 01 September 2005
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| PACS: |
52.77.Dq
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(Plasma-based ion implantation and deposition)
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81.15.Cd
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(Deposition by sputtering)
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81.65.Kn
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(Corrosion protection)
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