| Original Articles |
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Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases |
| QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming |
| State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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QIN Qi, GUO Li-Wei, ZHOU Zhong-Tang et al 2005 Chin. Phys. Lett. 22 2298-2301 |
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Abstract Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 570nm are observed under forward bias. An unusual emission at 390nm appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 570nm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.
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| Keywords:
42.72.Bj
78.30.Fs
78.55.-m
78.60.Fi
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Published: 01 September 2005
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| PACS: |
42.72.Bj
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(Visible and ultraviolet sources)
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78.30.Fs
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(III-V and II-VI semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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78.60.Fi
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(Electroluminescence)
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