| Original Articles |
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Low-Threshold-Current and High-out-Power 660nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R |
| ZHENG Kai;MA Xiao-Yu;LIN Tao;WANG Jun;LIU Su-Ping;ZHANG Guang-Ze |
| National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHENG Kai, MA Xiao-Yu, LIN Tao et al 2005 Chin. Phys. Lett. 22 2269-2272 |
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Abstract We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80mW without kinks, and the maximum output power was 184mW at 22°C. The threshold current was 40mA.
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| Keywords:
42.55.Px
81.05.Ea
82.33.Ya
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Published: 01 September 2005
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.05.Ea
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(III-V semiconductors)
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82.33.Ya
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(Chemistry of MOCVD and other vapor deposition methods)
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