| Original Articles |
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Characteristics of THz Emission from GaAs Crystal Excited by 400nm and 800nm Optical Pulses |
| YANG Yu-Ping;XU Xin-Long;YAN Wei;WANG Li |
| Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
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| Cite this article: |
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YANG Yu-Ping, XU Xin-Long, YAN Wei et al 2005 Chin. Phys. Lett. 22 2123-2126 |
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Abstract THz emission spectroscopy is used to study the generation mechanism dependent behaviour of terahertz (THz) electromagnetic waves from the GaAs crystal under excitation by 400nm and 800nm femtosecond (fs) pulses, respectively. The wavelength dependence of the emission spectrum under two types of THz generation mechanisms is analysed. Under the optical rectification mechanism, a slight enhancement of the spectral amplitude in the high-frequency regime is observed in a GaAs(110) crystal by the excitation of a 400-nm optical pulse compared with that of 800nm. Whereas an obvious red shift of the amplitude spectrum occurs in the GaAs(100) sample under the transient photoconduction mechanism. These phenomena are explained in detail by the duration of the optical pump pulse and the band structure of GaAs, respectively.
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| Keywords:
84.40.-x
42.79.Nv
72.40.+w
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Published: 01 August 2005
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| PACS: |
84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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42.79.Nv
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(Optical frequency converters)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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