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Microscopic Phase-Field Simulation of Atom Substitution Behaviour in Ni--Cr--Al Alloy
CHU Zhong, CHEN Zheng, WANG Yong-Xin, LU Yan-Li, ZHANG Jian-Jun
Chin. Phys. Lett. 2005, 22 (8):
1841-1844
.
Simulations are performed on atom substitution behaviour in Ni75Al25-xCrx alloys based on a microscopic phase-field model at 873K. The ordering of both the Al and Cr atoms takes place simultaneously, Cr occupies both the Al and Ni sites with a preference for the Al sites, and Cr and Al atoms together occupy the β -sites, and the complex γ’ Ni3(Al1-xCrx) (L12 structure) phases are formed during the precipitation. At the ordering boundary of L12 phases, Cr atoms occupy the Al sites, then Ni3Cr phases are formed.
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Radius of 9C from the Asymptotic Normalization Coefficient
LI Zhi-Hong, GUO Bing, LIU Wei-Ping, BAI Xi-Xiang, LIAN Gang, SU Jun, YAN Sheng-Quan, WANG Bao-Xiang, ZENG
Sheng
Chin. Phys. Lett. 2005, 22 (8):
1870-1872
.
The asymptotic normalization coefficient (ANC) of 9C = 8B+p deduced from 8Li(d,p)9Li reaction is used to obtain the root-mean-square (rms) radius of the loosely bound proton in the 9C ground state. We obtain (r2)1/2 = 3.61fm for the valence proton, which is significantly larger than the matter radius of 9C. The probability of the valence proton outside the matter radius of 9C is greater than 60%. The present work supports the conclusion that 9C has a proton halo structure.
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High-Spin States in Odd--Odd 140Pr Nucleus
YU Hai-Ping, GOU Ying-Xiang, ZHOU Xiao-Hong, ZHANG Yu-Hu, LEI Xiang-Guo, LUO Peng, LIU Min-Liang, SONG Li-Tao, WANG Hua-Lei, XIE Cheng-Ying, ZHENG Yong, GUO Wen-Tao, ZHU Li-Hua, WU Xiao-Guang
Chin. Phys. Lett. 2005, 22 (8):
1873-1876
.
High-spin level structure of doubly odd nucleus 140Pr has been investigated via the 130Te(14N,4n)140Pr reaction at beam energies from 55 to 65MeV. Measurements of γ-ray excitation functions, γ-ray singles and γ-γ-t coincidences were performed with twelve BGO(AC)HPGe detectors. The level scheme of 140Pr, including 27 new levels and 42 new γ rays, has been established for the first time. The level structure is compared with those in the neighbouring odd--odd nuclei, and interpreted qualitatively.
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Performance of a 10-Gbit/s Transmission System over 1500km G.652 Fibre Compensated by Cascaded Narrow-Band Chirped Fibre Bragg Gratings
LIU Yan, CHEN Yong, TAN Zhong-Wei, CAO Ji-Hong, ZHENG Kai, NING Ti-Gang, CHEN Ting, DONG Xiao-Wei, JIAN Shui-Sheng
Chin. Phys. Lett. 2005, 22 (8):
1944-1947
.
We obtain the error-free transmission of an 8×10Gb/s signal over a 1500km G.652 fibre by means of significantly improving the quality of narrow-band chirped fibre Bragg gratings (FBGs). Asymmetric apodization is one of the powerful measures to improve the quality of gratings. Wavelength-dependent transmission performance is also observed. The experimental results indicate that the total in-band local dispersion deviation of the cascaded gratings in each channel could be a good indicator of the performance degradation tendency at different operating wavelengths, which further reveals the potential of local dispersion deviation as a performance evaluating indicator of chirped FBGs.
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Improvement of Amplitude-Shift-Keying Signal Quality by Employing an Effective Spectrum Equalization Method in a Combined FSK/ASK Modulation Scheme
XIN Xiang-Jun, P. S. André, A. L. J. Teixeira, YU Chong-Xiu, Ana Ferreira, Tiago Silveira, P. M. Monteiro, F. da Rocha, J. L. Pinto,
Chin. Phys. Lett. 2005, 22 (8):
1948-1950
.
A simple, economical and applicable spectrum equalization method is implemented by employing a reshaping filter in the combined frequency-shift-keying/amplitude-shift-keying modulation scheme to improve the quality of amplitude-shift-keying optical signal. The 3-dB improvement for eye diagram height is experimentally demonstrated.
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A Novel Atmospheric Pressure Plasma Fluidized Bed and Its Application in Mutation of Plant Seeds
CHEN Guang-Liang, FAN Song-Hua, LI Chun-Ling, GU Wei-Chao, FENG Wen-Ran, ZHANG Gu-Ling, WANG Jiu-Li, Latif K,
ZHANG Shu-Gen, WANG Zhen-Quan, HAN Er-Li, FU Ya-Bo, YANG Si-Ze
Chin. Phys. Lett. 2005, 22 (8):
1980-1983
.
An atmospheric pressure plasma fluidized bed (APPFB) is designed to generate plasma using a dielectric barrier discharge (DBD) with one liquid electrode. In the APPFB system, the physical properties of DBD discharge and its application in plant-seed mutating are studied fundamentally. The results show that the generated plasma is a typical glow discharge free from filament and arc plasma, and the macro-temperature of the plasma fluidized bed is nearly at room temperature. There are no obvious changes in the pimientos when their seeds are treated by APPFB, but great changes are found for coxcombs.
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A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys
ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De
Chin. Phys. Lett. 2005, 22 (8):
1984-1986
.
Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-ray diffraction is extensively used to evaluate the crystalline quality, the chemical composition and the residual strain in Ga(Al,In)N thin films, which directly determine the emission wavelength and the device performance. Due to the minor mismatch in lattice parameters between Ga(Al, In)N alloy and a GaN virtual substrate, x-ray diffraction comes to a problem to separate the signal from Ga(Al,In)N alloy and GaN. We give a detailed comparison on different diffraction planes. In order to balance the intensity and peak separation between Ga(Al,In)N alloy and GaN, (0004) and $(10\bar 15)$ planes make the best choice for symmetric scan and asymmetric scan, respectively.
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A Direct Comparison between Static and Dynamic Melting Temperature Determinations below 100GPa
SUN Yu-Huai, HUANG Hai-Jun, LIU Fu-Sheng, YANG Mei-Xia, JING Fu-Qian,
Chin. Phys. Lett. 2005, 22 (8):
2002-2004
.
A preliminary experiment of sound velocity measurements for porous iron with initial average density of 6.275g/cm3 has been performed at pressures below 100GPa, in order to clarify a long-standing problem that the static melting temperature Tm, mostly below 100GPa due to its technical limitations, is notably lower than the extrapolated melting data inferred from the shock wave experiments made above 200GPa, for the sake of making a direct comparison between the experimental static and dynamic melting temperatures in the same pressure region. With the lately proposed Hugoniot sound velocity data analysis technique [Chin. Phys. Lett. 22 (2005) 863], the results deduced from this Hugoniot sound velocity measurement is Tm=3200K at 87GPa and Tm=3080K at 80GPa, which are in good agreement with the two latest static data of Tm=3510K at 105GPa and Tm=2750K at 58GPa, which utilized modern improved double-side laser heating and in situ accurate x-ray diffraction techniques in experiments. It can be concluded that consensus Tm data would be obtained from static and shock wave experiments in the case that the recently improved techniques are adopted in investigations.
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Combined Effect of Surface Tension, Gravity and van der Waals Force Induced by a Non-Contact Probe Tip on the Shape of Liquid Surface
LIU Nan, BAI Yi-Long, XIA Meng-Fen, KE Fu-Jiu,
Chin. Phys. Lett. 2005, 22 (8):
2012-2015
.
Aiming at understanding how a liquid film on a substrate affects the atomic force microscopic image in experiments, we present an analytical representation of the shape of liquid surface under van der Waals interaction induced by a non-contact probe tip. The analytical expression shows good consistence with the corresponding numerical results. According to the expression, we find that the vertical scale of the liquid dome is mainly governed by a combination of van der Waals force, surface tension and probe tip radius, and is weekly related to gravity. However, its horizontal extension is determined by the capillary length.
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Improvement of Performance of Organic Thin-Film Transistors through Zone Annealing
DONG Gui-Fang, LIU Qing-Di, WANG Li-Duo, QIU Yong
Chin. Phys. Lett. 2005, 22 (8):
2027-2030
.
A zone annealing process is adopted to improve the performance of pentacene organic thin film transistors. The process is completed in a glove box full of dry nitrogen gas and with a heating wire (Ф0.1mm tungsten wire) inside. The device have the structure of glass/ITO (150nm)/Ta2O5 (60nm)/pentacene (60nm)/Au (20nm). Under the gate--source voltage -60V and the drain--source voltage -60V, the source--drain current, the mobility, and the on/off current ratio increase from 4×10-7A to 2.0×10-6A, 2.9×10-3cm2V-1s-1 to 1.6×10 2cm2V-1s-1, and 2×103 to 5.33×103, respectively. It is found that the distance between the pentacene grain boundaries decreases and an obvious layer structure can be formed in grains after annealing. According to the transport of carriers in the polycrystalline film, these changes of the pentacene film can improve the source--drain current and the mobility.
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Shapiro Steps in Flux-Trapped Surface Intrinsic Junctions of Bi2Sr2CaCu2O8+δ
WEI Yan-Feng, ZHAO Shi-Ping, ZHU Xiao-Bo, CHEN Geng-Hua, REN Yu-Feng, YU Hong-Wei, YANG Qian-Sheng, HU Yun
Chin. Phys. Lett. 2005, 22 (8):
2051-2054
.
Microwave-field responses of the surface intrinsic Josephson junctions (IJJs) of Bi2Sr2CaCu2O8+δ superconductors are investigated. The IJJs are fabricated using an in situ low-temperature cleavage technique, which leads to the well-characterized surface CuO2 double layers and surface junctions. For the surface junctions in the large-junction limit, usually no Shapiro steps appear when a microwave field is applied. It is found that when the junctions are in a flux-trapped state, which is produced by a pulsed current and in which the critical current is significantly suppressed, clear Shapiro steps can be observed. These results are important for the study of the microwave-field properties of vortex-carrying IJJs and may find their use in device applications.
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Electronic Structure and Magnetism in Sm(Co,Cu)7
ZHANG Chang-Wen, LI Hua, DONG Jian-Min, GUO Yong-Quan, LI Wei
Chin. Phys. Lett. 2005, 22 (8):
2055-2058
.
The electronic density of states, spin-splittings and atomic magnetic moments of SmCo7-xCux are studied by means of the spin-polarized multi-scattering Xα method. The results show that a few of the electrons can transfer to the Sm $5d^{0}$ orbital due to orbital hybridization between Sm and Co. The exchange interactions between 3d and 5d electrons lead to the magnetic coupling between Sm and Co, and therefore result in the long-range ferromagnetic order in SmCo7-xCux. The Curie temperature of SmCo7-xCux is generally lower than that of the corresponding pure Co, which may be explained by the weaker average strength of coupling between Co lattices due to some negative exchange couplings mainly from the 2e site. The calculated results for the Sm5Co30Cu4 cluster may lead to a better understanding of why SmCo7-xCux is stable phase. Since the negative coupling of the 2e sites becomes small and the d bond at EF becomes stronger in contrast to SmCo7, which results in decrease of the free energy of the system, the stable ferromagnetic order forms in SmCo7-xCux.
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Optical Properties of Phase-Separated GaN1-xPx Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
LU Li-Wu, CHEN Ting-Jie, SHEN Bo, WANG Jiang-Nong, GE Wei-Kun
Chin. Phys. Lett. 2005, 22 (8):
2081-2083
.
Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80--160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.
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Synthesis and Optical Properties of ZnO Nanostructures
WANG Duo-Fa, LIAO Lei, LI Jin-Chai, FU Qiang, PENG Ming-Zeng, ZHOU Jun-Ming
Chin. Phys. Lett. 2005, 22 (8):
2084-2087
.
ZnO nanostructures with different morphologies were fabricated by changing the partial oxygen pressure. The structures, morphologies and optical properties of ZnO nanostructures were investigated by x-ray diffraction, field emission scanning electron microscopy and photoluminescence (PL) spectra at room temperature. All the samples show preferred orientation along the c-axis. The oxygen partial pressure and the annealing atmosphere have important effect on the PL property of ZnO nanostructures. The high oxygen partial pressure during growth of samples and high-temperature annealing of the ZnO samples in oxygen can increase oxygen vacancies and can especially increase antisite oxygen (Ozn) defects, which degraded the near band-edge emission. However, the annealing in H2 can significantly modify the NBE emission.
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Photoluminescence Mechanism of ZnO:Zn Investigated by Microwave Dielectric Spectrometry
DONG Guo-Yi, ZHENG Yi-Bo, LIN Lin, DOU Jun-Hong, WEI Zhi-Ren, YANG Shao-Peng, FU Guang-Sheng, LI Xiao-Wei
Chin. Phys. Lett. 2005, 22 (8):
2092-2095
.
We investigate the decay process of photoelectrons from a luminescent material of ZnO:Zn using a microwave dielectric spectrometry. Electrons in the conduction band are found to decay exponentially and the lifetime is 781ns, while the time interval of decay from the maximum to half of this value is 470ns. ZnO:Zn is a green luminescent material at its central wavelength of 510nm. Compared to the decay of electrons in the conduction band, the decay process of the luminescence is faster, and the time interval of decay from the maximum to half of the maximum is about 100ns. We believe that the mechanism of the ZnO:Zn visible luminescence is recombination luminescence, and find that our theoretical simulation is in agreement with the experimental results.
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High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3
ZHU Pin-Wen, IMAI Yoshio, ISODA Yukihiro, SHINOHARA Yoshikazi, JIA Xiao-Peng, ZOU Guang-Tian
Chin. Phys. Lett. 2005, 22 (8):
2103-2105
.
The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride (Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)2Te3 have been studied at room temperature. All the samples exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97×10-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of PbTe.
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Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering
WANG Hong-Chang, WANG Zhan-Shan, ZHANG Shu-Min, WU Wen-Juan, ZHANG Zhong, GU Zhong-Xiang, XU Yao, WANG Feng-Li, CHENG Xin-Bin, WANG Bei, QIN Shu-Ji, CHEN Ling-Yan
Chin. Phys. Lett. 2005, 22 (8):
2106-2108
.
Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.
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High Precise Internal Friction Calculation for Force Vibration Mode
LIANG Li-Min, FEI Guang-Tao, SHUI Jia-Peng, CUI Ping, WU Bing, CHEN Xiao-Ming, LUI Ke-Tao
Chin. Phys. Lett. 2005, 22 (8):
2109-2111
.
For the necessity of measuring the small phase difference of internal friction, a detailed comparison is carried out among the fast Fourier transformation (FFT), correlation function and three-parameter sine wave curve-fit methods. The comparison shows that the three-parameter sine wave curve-fit method can obtain more precise phase angle difference than correlation methods. Compared with the FFT algorithm, the three-parameter sine wave curve-fit method can obtain more precise frequency values.
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Thermal Behaviour for InGaAsP/InP Multi-Quantum-Well Superluminescent Diodes
LI Lan, FU Li-Wei, YANG Rui-Xia, LI Guang-Min, TAO Yi, ZHANG Na, ZHANG Xiao-Song
Chin. Phys. Lett. 2005, 22 (8):
2130-2132
.
Using a two-dimensional thermal flow model, we calculate the thermal resistance and the temperature distribution of InGaAsP/InP multi-quantum-well superluminescent diodes. The influence of lateral chip size and composition are evaluated. The results reveal that when the injection power reaches 1W, temperatures in the active region rises up to almost 50K. The width and length of the chip also have strong influence on the thermal resistance that can reach two orders of magnitude. The thermal resistance will change from 290K/W to 68K/W when the chip width increases from 500μm to 2500μm, and a similar result exists for the length. There is small effect on thermal resistance for active width. In view of the characteristics of output power versus the input current under pulsed and continues currents, the fitted experimental thermal resistance matches well with the measured results.
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88 articles
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