High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3

Chin. Phys. Lett.

2005, Vol. 22

Issue (8): 2103-2105 DOI:

Original Articles

High Thermoelectric Properties of PbTe Doped with Bi₂Te₃ and Sb₂Te₃

ZHU Pin-Wen^1,2;IMAI Yoshio¹;ISODA Yukihiro¹;SHINOHARA Yoshikazi¹;JIA Xiao-Peng²;ZOU Guang-Tian²

¹Eco-material Research Center, National Institute for Materials Science, Tsukuba 305-0047, Japan ²National Laboratory of Superhard Materials, Jilin University, Changchun 130012

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ZHU Pin-Wen, IMAI Yoshio, ISODA Yukihiro et al 2005 Chin. Phys. Lett. 22 2103-2105

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Abstract The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride (Bi₂Te₃), antimony telluride (Sb₂Te₃) and (BiSb)₂Te₃ have been studied at room temperature. All the samples exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97×10^-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of PbTe.

Keywords: 81.05.Hd 72.05.Jf

Published: 01 August 2005

PACS:	81.05.Hd	(Other semiconductors)
	72.05.Jf

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I8/02103

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	ZHU Pin-Wen
	IMAI Yoshio
	ISODA Yukihiro
	SHINOHARA Yoshikazi
	JIA Xiao-Peng
	ZOU Guang-Tian

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