| Original Articles |
|
|
|
|
Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance |
| QU Yu-Hua;JIANG De-Sheng;WU Dong-Hai;NIU Zhi-Chuan;SUN Zheng |
| Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
|
| Cite this article: |
|
QU Yu-Hua, JIANG De-Sheng, WU Dong-Hai et al 2005 Chin. Phys. Lett. 22 2088-2091 |
|
|
|
|
Abstract Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.
|
| Keywords:
78.55.-m
78.67.De
82.70.Uv
|
|
|
Published: 01 August 2005
|
|
| PACS: |
78.55.-m
|
(Photoluminescence, properties and materials)
|
| |
78.67.De
|
(Quantum wells)
|
| |
82.70.Uv
|
(Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
