| Original Articles |
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Calculation of Resistivity of the Insulating Layer in Tunnelling-Magnetoresistive Head by Fast Green Function Method |
| WEI Dan;PIAO Kun;QIN Jian;DONG Zhong |
| Lab of Advanced Materials, Dept. of Materials Science and Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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WEI Dan, PIAO Kun, QIN Jian et al 2005 Chin. Phys. Lett. 22 2063-2065 |
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Abstract We calculate the resistivity of the insulating layer in a tunnelling-magnetoresistive (TMR) magnetic head by using the Landauer--Büttiker formula with a fast Green function method, where a recursive process with a faster simulation speed and higher accuracy is carried out to substitute the inversion of Green’s matrix. A tight-binding model with an energy barrier ΔE is utilized to simulate the magnetoresistive tunnelling junction in the TMR head. The resistivity of the insulating layer is 2.6×105μΩcm with two oxygen-ion layers and ΔE=2.5eV, which agrees with the experimental data.
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| Keywords:
75.50.Ss
73.40.Rw
72.10.Bg
73.23.Ad
75.47.De
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Published: 01 August 2005
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| PACS: |
75.50.Ss
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(Magnetic recording materials)
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73.40.Rw
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(Metal-insulator-metal structures)
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72.10.Bg
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(General formulation of transport theory)
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73.23.Ad
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(Ballistic transport)
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75.47.De
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(Giant magnetoresistance)
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