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Characterization of Defects in Chemical Vapour Deposited Diamonds |
| ZHANG Ming-Long;XIA Yi-Ben;WANG Lin-Jun;GU Bei-Bei |
| School of Materials Science and Engineering, Shanghai University, Shanghai 200072 |
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| Cite this article: |
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ZHANG Ming-Long, XIA Yi-Ben, WANG Lin-Jun et al 2005 Chin. Phys. Lett. 22 1264-1266 |
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Abstract Room-temperature Raman and PL spectra, photocurrent (PC) and thermally stimulated current (TSC) were measured to investigate the mid-gap defects in diamonds grown by using a hot-filament chemical vapour deposition (CVD) technique. The [Si-V]0 centres caused by the Si-C bonds in diamond grains and at grain boundaries are located at 1.68eV. We firstly detect the level 1.55eV by using PL and it is tentatively attributed to the zero-phonon luminescence line or vibronic band of the [Si-V]0 induced by the Si-O bonds. The 2.7-3.2eV and 1.9-2.1eV PC peaks were detected and discussed. The [N-V] complex may be attributed to these defect levels. Some shallow energy levels lower than 1.0eV were also observed in the CVD diamond.
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81.15.Gh
81.05.Uw
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Published: 01 May 2005
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Uw
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