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Exact Solution to Helmholtz Equation for Inhomogeneous Medium: Its Application in Optical Communication
WANG Gang, WU Shao-Quan, HOU Bang-Pin
Chin. Phys. Lett. 2005, 22 (5):
1037-1040
.
In order to study the capability of amplifying the input optical signal of certain materials, we investigate the Helmholtz equation which describes a system of inhomogeneous media. After exploring its SU(1,1) algebraic structure, we obtain the exact solutions of this Helmholtz equation by means of the algebraic dynamical method. Based on the exact solutions, we analyse the capability of optical amplifiers, which is an important issue in modern optical communication. We take the wave number k0(z) and the expansion coefficient k2(z) to be the trigonometric functions, exponential functions and power functions of variable z, respectively. It is found that the material following the exponential functions is the best one for optical amplifiers.
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Indirect Relativistic Effect in Electron--Alkali-Atom Collision
LIU Yi-Bao, PANG Wen-Ning, DING Hai-Bing, SHANG Ren-Cheng
Chin. Phys. Lett. 2005, 22 (5):
1041-1044
.
We present detailed studies on the differential cross section (DCS) and total cross section (TCS) in electron--alkali-atom collision processes by using two types of distorted wave methods, the ordinary distorted wave method and the indirect-relativistic distorted wave method. We find that the indirect relativistic effect in the target atom can be neglected in the TCS calculation in the processes; however, with an increase of the atomic number, this effect becomes significant in the DCS calculation. Then, based on the density matrix theory, the orientation and alignment parameters of excited caesium P states scattered by electrons at low incident energy are calculated, and comparisons are made for the two series between the two methods. The results show that accordance is reached at scattering angles smaller than 45°, but considerable difference appears at angles larger than 45° due to the relativistic effect.
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Secure Quantum Key Distribution Network with Bell States and Local Unitary Operations
LI Chun-Yan, ZHOU Hong-Yu, , WANG Yan, DENG Fu-Guo,
Chin. Phys. Lett. 2005, 22 (5):
1049-1052
.
We propose a theoretical scheme for secure quantum key distribution network following the ideas in quantum dense coding. In this scheme, the server of the network provides the service for preparing and measuring the Bell states, and the users encode the states with local unitary operations. For preventing the server from eavesdropping, we design a decoy when the particle is transmitted between the users. The scheme has high capacity as one particle carries two bits of information and its efficiency for qubits approaches 100%. Moreover, it is unnecessary for the users to store the quantum states, which makes this scheme more convenient in applications than others.
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Theoretical Analysis of the Exotic Structure of 17F
LIANG Yu-Jie, , LI Xi-Han, , ZHOU Hong-Yu, , LIU Zu-Hua, DENG Fu-Guo,
Chin. Phys. Lett. 2005, 22 (5):
1086-1088
.
The first excited state and the ground state of 7F are studied with the asymptotic normalization coefficient method. The results show that the probabilities of the last proton being out of the binding potential in both the states are P=59.71% and P=27.61%, respectively. This means that the last nucleon in both the states of 17F is far-extended beyond the range of nuclear force, especially in the first excited state. This result is also verified by the calculation of the density distributions of the last proton in 17F. It is quantitatively confirmed that the first excited state of 17F is a nuclear halo state and its ground state is a proton skin state.
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Oscillator Strength for n=2 Transitions in Highly Ionized Sulfur
YANG Zhi-Hu, DU Shu-Bin, CHANG Hong-Wei, ZHANG Xiao-An, SU Hong, ZHANG Yan-Ping, SONG Zhang-Yong
Chin. Phys. Lett. 2005, 22 (5):
1099-1101
.
Oscillator strength f-values for L-shell transitions in highly ionized sulfur are studied by the beam--foil technique at the HI-13 tandem accelerator in China Institute of Atomic Energy. The lifetimes of the upper levels 2s2p1P01, 2p2 1S0, 2p2 3P1, 2p2 3 P2, 2 p2 3P0 of Be-like sulfur are measured to be 129±4, 81±5, 165±7, 159±8, 176±11ps. By using the measured lifetimes, the f-values are calculated to be 0.074, 0.082, 0.060, 0.066, 0.229, 0.056, 0.083, 0.089, 0.028 for the transitions 2s22p2 3P1-2s2p3 3P01, 2s22p 2P03/2-2s2p2 2P1/2, 2s2p2 4P3/2-2p3 4S03/2, 2s22p 2P01/2-2s2p2 2D3/2, 2s2 1S0-2s2p 1P01, 2s2p1P01-2p2 1S0, 2s2p3P00-2p2 3P1, 2s2p 3P022p2 3P2 and 2s2p 3P01-2p2 3P0. Most of the experimental results are in agreement with theoretical studies, but differ slightly from the previous experimental data.
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Near-Threshold Low Rydberg Depletion Spectroscopy of H2, D2, and HD
ZHANG Yan-Peng, GAN Chen-Li, SONG Jian-Ping, YU Xiao-Jun, GE Hao, MA Rui-Qiong, LI Chuang-She, LU Ke-Qing, E. E. Eyler
Chin. Phys. Lett. 2005, 22 (5):
1110-1113
.
Using high-resolution depletion spectroscopy, we have experimentally studied the physics of near-threshold low Rydberg states of all three stable isotopic variants of molecular hydrogen. The experiments were required to calibrate the absolute wavelength, including several transitions from the EF (v=0) and EF (v=6 or v=9) to the same low-n Rydberg states. The measurements have been performed for several initial rotational levels in all three stable isotopic variants. Transitions to very high vibrational levels of the B, B', and C states have been measured with accuracy 0.002cm1. The pulsed amplifier perturbations were also measured by optical heterodyne methods.
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Continuum Structures at the Second Dissociation Limit of Hydrogen Molecules
ZHANG Yan-Peng, GAN Chen-Li, SONG Jian-Ping, YU Xiao-Jun, MA Rui-Qiong, GE Hao, JIANG Tong, LU Ke-Qing, E. E. Eyler
Chin. Phys. Lett. 2005, 22 (5):
1114-1117
.
We describe near-threshold high-resolution spectra and continuum resonance dynamical behaviour of all three stable hydrogen isotopic variants, and finally obtain improved values for the dissociation energies of hydrogen molecule and its ion. The second dissociation limit is determined by analysing the onset of the vibrational continuum.
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X-Ray Emission from Zr, Mo, In and Pb Targets Bombarded by Slow Highly Charged Arq+(q =13, 14, 15, 16) Ions
CAI Xiao-Hong, YU De-Yang, LU Rong-Chun, SHAO Cao-Jie, Lu Jun, RUAN Fang-Fang, YANG Zhi-Hu, DING Bao-Wei, ZHANG Hong-Qiang, SHAO Jian-Xiong, CUI Ying, XU Xu, CHEN Xi-Meng
Chin. Phys. Lett. 2005, 22 (5):
1118-1120
.
We study the L x-ray emission from Zr, Mo and In targets and M x-ray emission from Pb target under bombardment of low energy Arq+ (q=13,14,15,16) ions. The relative x-ray yields were measured in the projectile kinetic energy range 210--360keV. It is found that the relative x-ray yields from Zr, Mo and Pb targets increase with the increasing projectile kinetic energy for Ar14+ and Ar16 projectiles and depend on the potential energy of the projectile remarkably.
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Blue Up-Conversion Fibre Laser Pumped by a 1120-nm Raman Fibre Laser
QIN Guan-Shi, HUANG Sheng-Hong, FENG Yan, SHIRAKAWA A., MUSHA M., UEDA Ken-ichi
Chin. Phys. Lett. 2005, 22 (5):
1140-1143
.
A Tm3+-doped ZrF4-BaF2-LaF3-AlF3-NaF (ZBLAN) fibre up-conversion laser pumped by a 1120-nm Raman fibre laser is demonstrated with blue output power levels up to 116mW. For the output mirror with 80% reflectivity, the slope efficiency is about 15%, the optical-to-optical conversion efficiency is 11%, and the maximum un-saturated output power is 116mW. For 60% reflectivity, the slope efficiency is about 18% and the optical-to-optical conversion efficiency is 12%, whilst the maximum saturated output power is about 80mW due to the existence of photo-degradation effect in Tm3+ doped ZBLAN glass fibre.
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A Novel Method for Multi-Pumped Fibre Raman Amplifier Gain Adjustment
HAN Qun, NING Ji-Ping, CHEN Zhi-Qiang, SHANG Lian-Ju
Chin. Phys. Lett. 2005, 22 (5):
1148-1151
.
A novel method for gain adjustment of multi-pumped fibre Raman amplifiers is proposed and numerically demonstrated. The method uses the areas under the curves of the pump power evolution along the gain fibre and the Newton--Raphson method to find an appropriate power combination of the pumps to realize the desired gain profile. Compared with the previously proposed methods, our method has two advantages: first, it can maintain the gain profile while changing the gain magnitude to the desired value; second, it is independent of the actual pumping scheme of the amplifier, i.e. it can be used for fibre Raman amplifiers with all kinds of pumping schemes including co-, counter-, or bi-directional pumping. Numerical simulations are provided to verify the proposed method and to demonstrate its effectiveness.
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High-Energy Ion Emission from Cooled Deuterium Clusters in 20TW Laser Fields
LIU Hong-Jie, GU Yu-Qiu, WANG Hong-Bin, ZHENG Zhi-Jian, GE Fang-Fang, WEN Xian-Lun, JIAO Chun-Ye, HE Ying-Ling, WEN Tian-Shu, HUANG Wen-Zhong, WANG Guang-Chang, ZHOU Wei-Min, ZHANG Shuang-Gen, WANG Xiang-Xian, ZHOU Kai-Nan, WANG Xiao-Dong, HUANG Xiao-Jun, NI Guo-Quan
Chin. Phys. Lett. 2005, 22 (5):
1174-1175
.
High-energy ion emission from intense-ultrashort (30fs) laser-pulse-cooled deuterium-cluster (80K) interaction is measured. The deuterium ions have an average energy 20keV, which greatly exceeds Zweiback's expectation [Phys. Rev. Lett. 84 (2000) 2634]. These fast deuterium ions can be used to drive fusion and have a broad prospect.
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A Two-Flux Radiation Model for Helical Instability of Arcs
GONG Ye, ZHENG Shu, XU Xiang, ZOU Xiu, LIU Jin-Yuan, LIU Yue, WANG Xiao-Gang
Chin. Phys. Lett. 2005, 22 (5):
1187-1190
.
A two-flux radiation model of the helical instability of arcs in axial magnetic field is presented. The temperature (and electrical conductivity) is approximated in a more realistic way (parabolic instead of flat profile) and a simplified term of radiation losses is included in the energy equation. The magnetohydrodynamic equations in an electrostatic approximation serve as the starting point of the theory. Using a linear time-dependent perturbation theory, the corresponding equations and an explicit analytic expression that corresponds to the term of radiation losses are derived in the presence of the radiation transfer energy, from which the marginal Maecker number and the growth rate of the helical instability can be given. It is found that, in comparison with the results without radiation, the arc stable area is reduced.
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Isostructural Phase Transition of TiN under High Pressure
ZHAO Jing-Geng, YANG Liu-Xiang, YU Yong, YOU Shu-Jie, YU Ri-Cheng, LI Feng-Ying, CHEN Liang-Chen, JIN Chang-Qing, LI Xiao-Dong, LI Yan-Chun, LIU Jing
Chin. Phys. Lett. 2005, 22 (5):
1199-1201
.
In situ high-pressure energy dispersive x-ray diffraction experiments on polycrystalline powder TiN with NaCl-type structure have been conducted with the pressure up to 30.1GPa by using a diamond anvil cell instrument with synchrotron radiation at room temperature. The experimental results suggest that an isostructural phase transition might exist at about 7GPa as revealed by the discontinuity of V/V0 with pressure.
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The Second Threshold Field of Charge-Density-Wave Conductor Rb0.3MoO3 in High Temperature Range
LI Da-Hua, XIONG Rui, WANG Jun-Feng, LI Chang-Zhen, YIN Di, YI Fan, TANG Wu-Feng, SHI Jing,
Chin. Phys. Lett. 2005, 22 (5):
1210-1213
.
The switching and threshold properties of quasi-one-dimensional charge-density-wave conductor rubidium blue bronze Rb0.33MoO3 single crystals are investigated in a comparative high and large temperature range. Beyond the limit temperature 50K of Littlewood's theory, even up to about 100K, typical sharp switching to negative or zero differential resistance is observed in E-I characteristic curves. Correspondingly, an obvious switching between two conducting states, from a lowly conducting state to a highly conducting state, is observed in the I-E characteristic curves in the same temperature range. Temperature dependence of the second threshold field ET2 accompanied by this kind of high field switching behaviour is firstly obtained. These new observations are discussed in the mechanism of the current inhomogeneity and redistribution due to the existence of transverse energy barriers suggested by Zhang et al. [Solid State Commun. 85 (1993) 121]
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Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD
HU Yi-Fan, C. D. Beling, S. Fung
Chin. Phys. Lett. 2005, 22 (5):
1214-1217
.
Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data, and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al+ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.
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Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski
M. Kasap, S. Acar, S. Ö, celik, S. Karadeniz, N. Tugluoglu
Chin. Phys. Lett. 2005, 22 (5):
1218-1221
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Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb and S-doped InAs samples grown by the liquid encapsulated Czochralski technique were carried out as a function of temperature (14-350K) and magnetic field (0-1.35T). In Te-doped InSb, an impurity level with energy E1 = 3meV and the activation energy E0= 0.26eV, which is the band gap energy, are obtained from the resistivity and Hall carrier concentration analysis. In S-doped InAs, both the linear and power law models are used in explaining the temperature-dependent resistivity. The effects of impurities on the electron and magnetic transportation properties of InAs and InSb have also been discussed.
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Substrate Dependence of Properties of Sputtered ITO Films
GAO Mei-Zhen, SHI Hui-Gang, Job R., LI Fa-Shen, Fahrner W. R.
Chin. Phys. Lett. 2005, 22 (5):
1228-1231
.
High-quality indium-tin-oxide (ITO) films are deposited on p-type Czochralski silicon and 7059 Corning glass by direct-current magnetron sputtering at various temperatures. The structural, electrical and optical properties of the ITO films are investigated as functions of the substrate temperature. A comparison between the characteristics of the ITO films on silicon and Corning glass is presented. The results show that for the ITO film on silicon, the nucleation begins from room temperature; the resistivity reaches a maximum value at 75°C; the reflectivity increases with increasing temperature; when temperature is above 125°C, the ITO grows in a three-dimensional manner and forms a granular structure. However, for the ITO film on glass, it is still in an amorphous state at 75°C. Moreover, both the resistivity and the reflectivity decrease with increasing temperature. Above 125°C, the ITO grows in a two-dimensional manner and forms a domain structure.
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Reorientation of Defect Dipoles in Ferroelectric Ceramics
LI Bao-Shan, LI Guo-Rong, ZHAO Su-Chuan, ZHU Zhi-Gang, DING Ai-Li
Chin. Phys. Lett. 2005, 22 (5):
1236-1238
.
We investigate the frequency, temperature, tetragonality and quenched temperature dependences of the hysteresis loops in Pb[(Zr0.52Ti0.48)0.95(Mn1/3Nb2/3)0.05]O3 (PMnN-PZT) ceramics. It has been demonstrated that the polarization-field hysteresis curves show ``pinched'' shapes when tested at room temperature, higher frequency or using the large-tetragonality specimen. While normal square-like loops are observed at 200°C and 0.01Hz or using the small-tetragonality one. Meanwhile, close relations between the P-E loops and the applied frequency, temperature or tetragonality reveal that there exists a typical relaxation time corresponding to the reorientation of the defect dipoles. It can be seen further from the quenched temperature dependences of the loops that the reorientation of the defect dipoles may influence the pinching. Compared to the intrinsic depinning procedure induced by changes of the distribution of defect dipoles, we provide new evidence for extrinsic depinning mechanism of the defect dipoles in the ferroelectric ceramics.
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Water-Induced Degradation in Lead Zinc Niobate--Lead Zirconate Titanate Soft Piezoelectric Ceramics
JIANG Xiang-Ping, CHEN Wan-Ping, PENG Zhi, ZENG Min, CHAN-WANG Li-Hua, YIN Qing-Rui
Chin. Phys. Lett. 2005, 22 (5):
1239-1242
.
Water-induced degradation of lead zinc niobate--lead zirconate titanate (Pb(Zn1/3Nb2/3)O3-Pb(ZrTi)O3) soft piezoelectric ceramics is studied using electrochemical hydrogen charging, in which the silver electrodes of the piezoelectric ceramics constitute a cathode in 0.01-M NaOH solution to evolve hydrogen by electrolysis of water. It is found that with the increasing hydrogen charging time, the resonance impedance increases, the difference between the resonance frequency and the anti-resonance frequency decreases, the spontaneous polarization, the remanent polarization and the piezoelectric coefficient d33 decrease. The degradation behaviour of the soft piezoelectric ceramics can be explained to hydrogen incorporating into the lattice and forming hydroxy (OH-) bonds in the perovskite structure, which prevents the Ti ions from switching and increases the coercive field Ec. The degradation characteristics of the soft piezoelectric ceramics are quite different from that of lead zirconate titanate hard piezoelectric ceramics.
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Effects of Substrates with Different Dielectric Parameters on Left-Handed Frequency of Left-Handed Materials
QUAN Bao-Gang, LI Chao, SUI Qiang, LI Jun-Jie, LIU Wu-Ming, LI Fang, GU Chang-Zhi
Chin. Phys. Lett. 2005, 22 (5):
1243-1245
.
Wedge-shaped left-handed materials (LHMs) with split ring resonators and wires structures are fabricated by photolithography and lift-off techniques, and the variation of left-handed frequency induced by substrates with different dielectric parameters is investigated. The Snell refraction experiments of the LHM samples are carried out on an angular resoled microwave spectrometer, and the results indicate that the left-handed frequencies of the LHMs shifted downward from 10.57GHz to 9.74GHz when the dielectric parameters of the LHM substrates increase from 3.7 to 4.8. Moreover, the finite difference time domain method is used to simulate the microwave transmission properties of the left-handed materials with different substrates, and the experimental results are in agreement with the numerical simulation results. In addition, the reason for the shifting of the left-handed frequency of the LHMs is discussed theoretically.
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optical, Structural and Laser-Induced Damage Threshold Properties of HfO2 Thin Films Prepared by Electron Beam Evaporation
ZHAN Mei-Qiong, Zhang Dong-Ping, TAN Tian-Ya, HE Hong-Bo, SHAO Jian-Da, FAN Zheng-Xiu
Chin. Phys. Lett. 2005, 22 (5):
1246-1248
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We prepare HfO2 thin films by electron beam evaporation technology. The samples are annealed in air after deposition. With increasing annealing temperature, it is found that the absorption of the samples decreases firstly and then increases. Also, the laser-induced damage threshold (LIDT) increases firstly and then decreases. When annealing temperature is 473K, the sample has the highest LIDT of 2.17J/cm2, and the lowest absorption of 18ppm. By investigating the optical and structural characteristics and their relations to LIDT, it is shown that the principal factor dominating the LIDT is absorption.
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Structural and Upconversion Fluorescence Properties of Er3+/Yb3+-Codoped Lead-Free Germanium-Bismuth Glass
SUN Hong-Tao, ZHANG Li-Yan, DUAN Zhong-Chao, YU Chun-Lei, ZHANG Jun-Jie, Dai Shi-Xun, HU Li-Li, JIANG Zhong-Hong
Chin. Phys. Lett. 2005, 22 (5):
1249-1252
.
We study the structural and infrared-to-visible upconversion fluorescence properties of Er3+/Yb3+-codoped lead-free germanium-bismuth glass. The structure of lead-free germanium-bismuth-lanthanum glass is investigated by peak-deconvolution of Raman spectroscopy. Intense green and red emissions centred at 525, 546, and 657nm, corresponding to the transitions 2H11/2→4I15/2, 4S3/2→4I15/2, and 4F9/2→4I15/2, respectively, are observed at room temperature. The quadratic dependence of the 525, 546, and 657nm emissions on excitation power indicates that a two-photon absorption process occurs under 975nm excitation.
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Conduction Current Characteristics and Carrier Mobility of Both Original and Corona-Resistant Polyimide Films
ZHANG Pei-Hong, FAN Yong, WANG Fo-Chi, XIE Hua, LI Gang, LEI Qing-Quan
Chin. Phys. Lett. 2005, 22 (5):
1253-1255
.
The electric conduction current characteristics of both Dupont original and corona-resistant polyimide films (100HN and 100CR) before and after corona-aging eight hours under electric field of 10kV/mm and 20kV/mm were measured. The results show that the conduction current of 100CR is about one order of magnitude larger than that of 100HN. Based on the space charge aging theory, the electric degradation threshold obtained from the space charge limit current plot is 40kV/mm for 100CR and 35kV/mm for 100HN, and decreases with the increasing corona-aged field. By measuring the depolarization current of the two films at 170°C, it is observed that the decay of depolarization current of 100CR is faster than that of 100HN. Based on the depolarization current curve, the apparent carrier mobility and trap depth of 1.2×1013,m3/Vs to 3×1014m2/Vs and 1.052eV to 1.105eV for 100CR, 1.12×1013m2/Vs to 8×10-14m2/Vs and 1.054eV to 1.069eV for 100HN were, respectively, calculated during depolarizing.
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Luminescence Kinetic Model for Long-Afterglow Phosphor
(Sr0.5Ca1.5)MgSi2O7:Eu2+,Dy3+
LIU Bo, SHI Chao-Shu, TAO Ye, XIAO Zhi-Guo
Chin. Phys. Lett. 2005, 22 (5):
1256-1259
.
A luminescence kinetic model for the green-emission long-afterglow phosphor (Sr0.5Ca1.5)MgSi2O7:Eu2+,Dy3+ is proposed based on the studies of the thermoluminescence and isothermal decay curves at different temperatures. The isothermal decay curves at different temperatures meet the hyperbolic law and show to be dependent on temperature. Combined with the decay curves and the thermoluminescence curves, it can be concluded that the long afterglow of this material originates from the traps with energy distribution rather than a single level trap. Upon illumination with ultra-violet or visible light, the trap filling can proceed via excitation of 4f electrons to the 5d level of Eu2+ ions. After excitation, 5d electrons can be transferred to the trap related to Dy3+ ions, and Eu3+ is left behind. Upon subsequent heating, the electron is released from this trap and recombines with Eu3+ to produce Eu2+ emission.
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Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System
HU Yue-Hui, CHEN Guang-Hua, ZHOU Jian-Er, RONG Yan-Dong, LI Ying, SONG Xue-Mei, ZHANG Wen-Li, DING Yi, GAO Zhuo, MA Zhan-Jie, ZHOU Huai-En, ZHU Xiu-Hong
Chin. Phys. Lett. 2005, 22 (5):
1260-1263
.
We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2)=20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508cm$^{-1}$. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 105.
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Networks Emerging from the Competition of Pullulation and Decrepitude
JIANG Pin-Qun, WANG Bing-Hong, ZHOU Tao, JIN Ying-Di, FU Zhong-Qian, ZHOU Pei-Ling, LUO Xiao-Shu
Chin. Phys. Lett. 2005, 22 (5):
1285-1288
.
In real-world network evolution, the aging effect is universal. We propose a microscopic model for aging networks, which suggests that the activity of a vertex is the result of the competition of two factors: pullulation and decrepitude. By incorporating the pullulation factor into previous models of aging networks, both the global and individual aging effect curves in our model are single peaked, which agrees with the empirical data well. This model can generate networks with scale-free degree distribution, large clustering coefficient and small average distance when the decrepitude intensity is small and the network size not very large. The results of our model show that pullulation may be one of the most important factors affecting the structure and function of aging networks and should not be neglected at all.
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Effect of Gamma-Ray Beaming on the Fluxes of Gamma-Ray Pulsars
JIANG Ze-Jun, ZHANG Li,
Chin. Phys. Lett. 2005, 22 (5):
1289-1292
.
We study the effect of γ-ray beaming on γ-ray emission of the pulsars in a self-sustained outer gap model. In this model, averaged γ-ray flux is a function of period, magnetic field, magnetic inclination angle and solid angle of γ-ray beaming for a γ-ray pulsar. We generate a sample of γ-ray pulsars with their ages less than 106 years by using the Monte Carlo method, and then study the γ-ray beaming effect. The comparison of distributions of periods, magnetic fields, distances, γ-ray energy fluxes and period derivatives of the simulated γ-ray pulsars with those of observed γ-ray pulsars by the detector EGRET shows that γ-ray beaming has an important role on the detection of γ-ray pulsars. Furthermore, possible γ-ray pulsars observed by the detector GLAST are predicted.
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77 articles
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