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Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System |
| HU Yue-Hui1,2;CHEN Guang-Hua1;ZHOU Jian-Er2;RONG Yan-Dong1;LI Ying1;SONG Xue-Mei1;ZHANG Wen-Li1;DING Yi1;GAO Zhuo1;MA Zhan-Jie1;ZHOU Huai-En1;ZHU Xiu-Hong1 |
| 1Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022
2Institute of Jingdezhen Ceramic, Jingdezhen 333001 |
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| Cite this article: |
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HU Yue-Hui, CHEN Guang-Hua, ZHOU Jian-Er et al 2005 Chin. Phys. Lett. 22 1260-1263 |
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Abstract We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2)=20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508cm$^{-1}$. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 105.
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| Keywords:
81.15.Gh
71.23.Cq
78.30.Ly
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Published: 01 May 2005
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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71.23.Cq
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(Amorphous semiconductors, metallic glasses, glasses)
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78.30.Ly
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(Disordered solids)
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