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A New Method to Prepare Boron Nitride Thin Films |
| LIU Li-Hua1,2;LI Ying-Ai1;FENG Wei1;LI Wei-Qing1;ZHAO Chun-Hong1;WANG Yu-Xin1;ZHAO Yong-Nian1 |
| 1National Key Laboratory of Superhard Materials, Jilin University, Changchun 130012
2College of Physics, Jilin Normal University, Siping 136000 |
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| Cite this article: |
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LIU Li-Hua, LI Ying-Ai, FENG Wei et al 2005 Chin. Phys. Lett. 22 1205-1209 |
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Abstract We report a new method to prepare boron nitride (BN) thin films on Si (100) substrates in an Ar-N2-BCl3-H2 gas system by magnetron arc enhanced plasma chemical vapour deposition. Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize the films. The FTIR spectra show that the deposited boron nitride films experienced a transition from pure h-BN phase to a cubic-containing phase with the variation of arc current ranging from 10A to 18A. The BN film with 42% c-BN was obtained without substrate bias voltage. In the gas system of Ar--N2-BCl2-H2, h-BN can be preferentially etched by chlorine. The chemical etching effect of chlorine allows the formation of c-BN without substrate bias voltage, which may develop a new perspective for the deposition of high quality c-BN film with low stress.
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| Keywords:
68.55.Nq
81.15.Gh
52.80.Vp
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Published: 01 May 2005
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| PACS: |
68.55.Nq
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(Composition and phase identification)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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52.80.Vp
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(Discharge in vacuum)
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